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参数资料
| 型号： | BF511 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | JFETs |
| 英文描述： | N-channel silicon FET |
| 封装： | BF511<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件页数： | 2/9页 |
| 文件大小： | 234K |
| 代理商： | BF511 |
December 1997
2
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
PINNING - SOT23
1
2
3
= gate
= drain
= source
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
2
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
Drain-source voltage
Drain current (DC or average)
Total power dissipation
up to T
amb
= 40
C
V
DS
I
D
max.
max.
20
30
V
mA
P
tot
max.
250
mW
BF510
511
2.5
7.0
512
513
10 mA
18 mA
Drain current
V
DS
= 10 V; V
GS
= 0
0.7
3.0
6
I
DSS
12
Transfer admittance (common source)
V
DS
= 10 V; V
GS
= 0; f = 1 kHz
Feedback capacitance
V
DS
= 10 V; V
GS
= 0
V
DS
= 10 V; I
D
= 5 mA
Noise figure at optimum source admittance
G
S
= 1 mS;
B
S
= 3 mS; f = 100 MHz
V
DS
= 10 V; V
GS
= 0
V
DS
= 10 V; I
D
= 5 mA
y
fs
2.5
4
6
7 mS
C
rs
C
rs
typ.
typ.
0.3
0.3
pF
0.3 pF
0.3
F
F
typ.
typ.
1.5
1.5
dB
1.5 dB
1.5
相关PDF资料 |
PDF描述 |
|---|---|
| BF512 | N-channel silicon FET |
| BF513 | N-channel silicon FET |
| BF545A | N-channel FET |
| BF545B | N-channel FET |
| BF545C | N-channel FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF511,215 | 功能描述:射频JFET晶体管 JFET N-CH 20V 10MA RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| BF511215 | 制造商:NXP Semiconductors 功能描述:JET N CH 20V SOT-23 制造商:NXP Semiconductors 功能描述:RF JFET N CH 20V 7MA 3-SOT |
| BF5118-20B | 功能描述:CCFL 荧光灯 5.6mm X 118mm White RoHS:否 制造商:JKL Components 灯泡类型:Miniature Cold Cathode Fluorescent Lamp 起动电压:1636 V 工作电压:676 V 工作电流:5 mA 强度:34000 cd/m2 长度:318 mm 直径:2.6 mm 封装:Bulk |
| BF511T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 2.5A I(DSS) | TO-236 |
| BF512 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel silicon field-effect transistors |
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