参数资料
型号: BFR520
厂商: NXP Semiconductors N.V.
元件分类: 功率晶体管
英文描述: NPN 9 GHz wideband transistor
封装: BFR520<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR520<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件页数: 5/14页
文件大小: 163K
代理商: BFR520
BFR520
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NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
5 of 14
NXP Semiconductors
BFR520
NPN 9 GHz wideband transistor
I
C
= 0 A; f = 1 MHz.
Feedback capacitance as a function of
collector-base voltage.
T
amb
= 25
C; f = 1 GHz.
Transition frequency as a function of collector
current.
Fig 3.
Fig 4.
V
CE
= 6 V; f = 900 MHz.
Gain as a function of collector current;
f = 900 MHz.
V
CE
= 6 V; f = 2 GHz.
Gain as a function of collector current;
f = 2 GHz.
Fig 5.
Fig 6.
mra704
0.6
0.4
0.2
0
0
4
8
12
C
re
(pF)
V
CB
(V)
mra705
f
T
(GHz)
I
C
(mA)
12
8
4
0
10
1
1
10
10
2
V
CE
= 6 V
3 V
mra706
25
20
15
10
5
0
0
10
20
30
gain
(dB)
I
C
(mA)
MSG
G
max
G
UM
mra707
gain
(dB)
I
C
(mA)
25
20
15
10
5
00
10
20
30
Gmax
GUM
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