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参数资料
| 型号： | BFR520T |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封装： | BFR520T<SOT416 (SOT416)|<<http://www.nxp.com/packages/SOT416.html<1<week 17, 2003,; |
| 文件页数： | 2/13页 |
| 文件大小： | 272K |
| 代理商： | BFR520T |
2000 Apr 03
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) package.
APPLICATIONS
Wideband applications such as
satellite TV tuners, cellular phones,
cordless phones, pagers etc., with
signal frequencies up to 2 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
lfpage
1
2
3
MBK090
Top view
Fig.1 SOT416.
Marking code:
N2.
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
120
9
MAX.
UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
open emitter
R
BE
= 0
20
15
70
150
250
V
V
mA
mW
up to T
s
= 75
C; note 1
I
C
= 20 mA; V
CE
= 6 V; T
j
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
GHz
G
UM
maximum unilateral power
gain
noise figure
15
dB
F
1.1
1.6
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
R
BE
= 0
open collector
65
20
15
2.5
70
150
+150
150
V
V
V
mA
mW
C
C
up to T
s
= 75
C; note 1
相关PDF资料 |
PDF描述 |
|---|---|
| BFR520T | NPN 9 GHz wideband transistor |
| BFR520 | NPN 9 GHz wideband transistor |
| BFR520 | NPN 9 GHz wideband transistor |
| BFR520 | NPN 9 GHz wideband transistor |
| BFR520 | NPN 9 GHz wideband transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BFR520T,115 | 功能描述:射频双极小信号晶体管 NPN 20V 70mA 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFR520T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 70MA I(C) | SOT-23 |
| BFR53 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN 2 GHz wideband transistor |
| BFR53T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-23 |
| BFR54 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN medium frequency transistor |
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