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参数资料
| 型号： | BFR520T |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封装： | BFR520T<SOT416 (SOT416)|<<http://www.nxp.com/packages/SOT416.html<1<week 17, 2003,; |
| 文件页数： | 5/13页 |
| 文件大小： | 272K |
| 代理商： | BFR520T |
2000 Apr 03
5
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
handbook, halfpage
(dB)
MRC027
10
12
14
16
18
0
10
20
30
IC(mA)
3 V
= 6 V
CE
V
Fig.6
Maximum unilateral power gain as a
function of collector current; typical values.
V
CE
= 6 V; f = 900 MHz; T
= 25
C.
G
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
handbook, halfpage
(dB)
MRC026
0
5
10
15
20
0
10
20
30
MSG
GUM
Gmax
IC(mA)
Fig.7
Gain as a function of collector current;
typical values.
V
CE
= 6 V; f = 2 GHz; T
= 25
C.
G
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
handbook, halfpage
(dB)
MRC024
0
10
2
10
20
30
40
10
1
1
10
f (GHz)
MSG
GUM
Gmax
Fig.8
Gain as a function of frequency;
typical values.
I
C
= 5 mA; V
= 6 V; T
= 25
C.
G
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
handbook, halfpage
gain
(dB)
MRC025
0
10
2
10
20
30
40
10
1
1
10
f (GHz)
MSG
GUM
Gmax
Fig.9
Gain as a function of frequency;
typical values.
I
C
= 20 mA; V
= 6 V; T
= 25
C.
G
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
相关PDF资料 |
PDF描述 |
|---|---|
| BFR520T | NPN 9 GHz wideband transistor |
| BFR520 | NPN 9 GHz wideband transistor |
| BFR520 | NPN 9 GHz wideband transistor |
| BFR520 | NPN 9 GHz wideband transistor |
| BFR520 | NPN 9 GHz wideband transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BFR520T,115 | 功能描述:射频双极小信号晶体管 NPN 20V 70mA 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFR520T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 70MA I(C) | SOT-23 |
| BFR53 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN 2 GHz wideband transistor |
| BFR53T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-23 |
| BFR54 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN medium frequency transistor |
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