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参数资料
| 型号： | BFR92A |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN 5 GHz wideband transistor |
| 封装： | BFR92A/A2<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<Always Pb-free,;BFR92A/A2<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<Always P |
| 文件页数： | 3/12页 |
| 文件大小： | 277K |
| 代理商： | BFR92A |
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
.
2.
3.
Measured on the same die in a SOT37 package (BFR90A).
d
im
=
60 dB (DIN 45004B); I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
; VSWR
<
2; T
amb
= 25
°
C
V
p
= V
O
at d
im
=
60 dB; f
p
= 795.25 MHz;
V
q
= V
O
6 dB; f
q
= 803.25 MHz;
V
r
= V
O
6 dB; f
r
= 805.25 MHz;
measured at f
p
+ f
q
f
r
= 793.25 MHz.
I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
; VSWR
<
2; T
amb
= 25
°
C
V
p
= 60 mV at f
p
= 250 MHz;
V
q
= 60 mV at f
q
= 560 MHz;
measured at f
p
+ f
q
= 810 MHz.
4.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
≤
95
°
C; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
TYP.
90
0.6
MAX.
UNIT
I
CBO
h
FE
C
c
collector leakage current
DC current gain
collector capacitance
I
E
= 0; V
CB
= 10 V
I
C
= 15 mA; V
CE
= 10 V; see Fig.4
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz;
see Fig.5
I
C
= i
c
= 0; V
EB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz;
see Fig.6
I
C
= 15 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 15 mA; V
CE
= 10 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 10 V; f = 1 GHz;
Γ
s
=
Γ
opt
; T
amb
= 25
°
C;
see Figs 13 and 14
I
C
= 5 mA; V
CE
= 10 V; f = 2 GHz;
Γ
s
=
Γ
opt
; T
amb
= 25
°
C;
see Figs 13 and 14
notes 2 and 3
notes 2 and 4; see Fig.16
50
135
nA
pF
C
e
C
re
f
T
emitter capacitance
feedback capacitance
transition frequency
1.2
0.35
5
pF
pF
GHz
G
UM
maximum unilateral power
gain (note 1)
14
dB
8
dB
F
noise figure
2.1
dB
3
dB
V
O
d
2
output voltage
second order intermodulation
distortion
150
50
mV
dB
G
UM
10 log
S
2
1
S
11
–
1
S
22
2
–
--------------------------------------------------------------dB
=
Rev. 04 - 2 March 2009
3 of 12
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