参数资料
型号: BFR92AW
厂商: NXP Semiconductors N.V.
元件分类: 功率晶体管
英文描述: NPN 5 GHz wideband transistor
封装: BFR92AW<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,;BFR92AW<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,;
文件页数: 1/13页
文件大小: 271K
代理商: BFR92AW
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NXP Semiconductors
BFR92AW
NPN 5 GHz wideband transistor
Rev. 03 — 12 March 2008
Product data sheet
相关PDF资料
PDF描述
BFR92AW NPN 5 GHz wideband transistor
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BFR92A NPN 5 GHz wideband transistor
BFR92A NPN 5 GHz wideband transistor
BFR93AR NPN 6 GHz wideband transistor
相关代理商/技术参数
参数描述
BFR92AW /T3 功能描述:射频双极小信号晶体管 TAPE13 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
BFR92AW T/R 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.025A 3-Pin SC-70 T/R
BFR92AW,115 功能描述:射频双极小信号晶体管 NPN 15V 5GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
BFR92AW,135 功能描述:射频双极小信号晶体管 TAPE13 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
BFR92AW 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-323