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参数资料
| 型号： | BFS540 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封装： | BFS540<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,; |
| 文件页数： | 3/13页 |
| 文件大小： | 273K |
| 代理商： | BFS540 |
2000 May 30
3
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming s
12
is zero and
s
1
s
11
–
1
s
22
–
2.
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
; f = 900 MHz; T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2p
q)
= 898 MHz and at f
(2q
p)
= 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
T
s
80
C; note 1
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
190
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
100
TYP.
120
2
0.9
0.6
9
MAX.
UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
I
E
= 0; V
CE
= 8 V
I
C
= 40 mA; V
CE
= 8 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
s
=
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 2 GHz; T
amb
= 25
C
I
c
= 40 mA; V
CE
= 8 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C
note 2
50
250
nA
pF
pF
pF
GHz
G
UM
maximum unilateral power
gain (note 1)
14
dB
8
dB
s
21
2
insertion power gain
12
13
dB
F
noise figure
1.3
1.8
dB
1.9
2.4
dB
2.1
dB
P
L1
output power at 1 dB gain
compression
third order intercept point
21
dBm
ITO
34
dBm
G
UM
10 log
2
2
2
--------------------------------------------------------
dB.
=
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