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| 型号： | BFU710F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封装： | BFU710F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件页数： | 3/12页 |
| 文件大小： | 126K |
| 代理商： | BFU710F |
BFU710F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 20 April 2011
3 of 12
NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
4. Marking
Table 4.
Type number
BFU710F
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Marking
Marking
D5*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Limiting values
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
10
2.8
1.0
10
136
+150
150
Unit
V
V
V
mA
mW
°
C
°
C
T
sp
≤
90
°
C
[1]
-
65
-
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
440
Unit
K/W
Fig 1.
Power derating curve
T
sp
(
°
C)
0
160
120
40
80
001aam842
100
50
150
200
P
tot
(mW)
0
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| BFU710F,115 | 功能描述:射频硅锗晶体管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
| BFU710F,115-CUT TAPE | 制造商:NXP 功能描述:BFU710 Series 5.5 V 14 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4 |
| BFU710F115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BFU725F | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
| BFU725F,115 | 功能描述:射频双极小信号晶体管 RF NPN Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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