- 您现在的位置：买卖IC网 > PDF目录378417 > BFU710F (NXP Semiconductors N.V.) NPN wideband silicon germanium RF transistor PDF资料下载
参数资料
| 型号： | BFU710F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封装： | BFU710F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件页数： | 2/12页 |
| 文件大小： | 126K |
| 代理商： | BFU710F |
BFU710F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 20 April 2011
2 of 12
NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
[1]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
[2]
2. Pinning information
Table 2.
Pin
1
2
3
4
3. Ordering information
Table 3.
Type number
Quick reference data
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Typ
-
-
-
2
-
375
Max
10
2.8
1.0
10
136
550
Unit
V
V
V
mA
mW
T
sp
≤
90
°
C
I
C
= 1 mA; V
CE
= 2 V;
T
j
= 25
°
C
V
CB
= 2 V; f = 1 MHz
[1]
-
200
C
CBS
collector-base
capacitance
transition frequency
-
21
-
fF
f
T
I
C
= 9 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
°
C
I
C
= 9 mA; V
CE
= 2 V;
f = 12 GHz; T
amb
= 25
°
C
I
C
= 2 mA; V
CE
= 2 V;
f = 12 GHz;
Γ
S
=
Γ
opt
I
C
= 5 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
;
f = 5.8 GHz; T
amb
= 25
°
C
-
43
-
GHz
G
p(max)
maximum power gain
[2]
-
14
-
dB
NF
noise figure
-
1.45
-
dB
P
L(1dB)
output power at 1 dB
gain compression
-
4.5
-
dBm
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline
Graphic symbol
1
2
3
4
mbb159
4
1, 3
2
Ordering information
Package
Name
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU710F
相关PDF资料 |
PDF描述 |
|---|---|
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU725F | NPN wideband silicon germanium RF transistor |
| BFU725F | NPN wideband silicon germanium RF transistor |
| BFU725F | NPN wideband silicon germanium RF transistor |
| BFU725F | NPN wideband silicon germanium RF transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BFU710F,115 | 功能描述:射频硅锗晶体管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
| BFU710F,115-CUT TAPE | 制造商:NXP 功能描述:BFU710 Series 5.5 V 14 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4 |
| BFU710F115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BFU725F | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
| BFU725F,115 | 功能描述:射频双极小信号晶体管 RF NPN Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。