参数资料
型号: BFU710F
厂商: NXP Semiconductors N.V.
元件分类: 晶体管
英文描述: NPN wideband silicon germanium RF transistor
封装: BFU710F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,;
文件页数: 9/12页
文件大小: 126K
代理商: BFU710F
BFU710F
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NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 20 April 2011
9 of 12
NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
9. Abbreviations
Table 8.
Acronym
AMR
DBS
DC
DRO
FM
GPS
LNA
Ka
LNB
NPN
RF
RKE
10. Revision history
Table 9.
Document ID
BFU710F v.1
Abbreviations
Description
Automatic Meter Reading
Direct Broadcast Satellite
Direct Current
Dielectric Resonator Oscillator
Frequency Modulation
Global Positioning System
Low Noise Amplifier
Kurtz above
Low Noise Block
Negative-Positive-Negative
Radio Frequency
Remote Keyless Entry
Revision history
Release date
20110420
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
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BFU710F,115-CUT TAPE 制造商:NXP 功能描述:BFU710 Series 5.5 V 14 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4
BFU710F115 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BFU725F 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor
BFU725F,115 功能描述:射频双极小信号晶体管 RF NPN Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel