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参数资料
| 型号： | BFY193P |
| 元件分类： | 开关 |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数： | 1/7页 |
| 文件大小： | 525K |
| 代理商： | BFY193P |
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
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Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
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Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
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Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
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Double shell case
For high mechanical strength and high electrical insulation.
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Compact size
The small rear end of the switch allows space saving behind the panel.
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Finish
Matt black finish on body, bushing, lever and hardware.
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Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
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Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
相关PDF资料 |
PDF描述 |
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| BFY193S | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| BFY196 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| BFY196H | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| BFY196P | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| BFY196S | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相关代理商/技术参数 |
参数描述 |
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| BFY193PZZZA1 | 功能描述:RF Transistor NPN 12V 80mA 7.5GHz 580mW Surface Mount MICRO-X1 制造商:infineon technologies 系列:- 包装:散装 零件状态:过期 晶体管类型:NPN 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:7.5GHz 噪声系数（dB，不同 f 时的典型值）:2.3dB ~ 2.9dB @ 2GHz 增益:12.5dB ~ 13.5dB 功率 - 最大值:580mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 30mA，8V 电流 - 集电极（Ic）（最大值）:80mA 安装类型:表面贴装 封装/外壳:MICRO-X1 供应商器件封装:MICRO-X1 标准包装:1 |
| BFY193S | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel NPN Silicon RF Transistor |
| BFY193SAMNZ | 功能描述:射频双极小信号晶体管 RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFY196 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel NPN Silicon RF Transistor |
| BFY196_11 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel NPN Silicon RF Transistor |
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