参数资料
型号: BQ26221PWR
厂商: Texas Instruments
文件页数: 10/23页
文件大小: 0K
描述: IC BATTERY MONITOR HP 8-TSSOP
标准包装: 1
功能: 电池监控器
电池化学: 多化学
电源电压: 2.8 V ~ 4.5 V
工作温度: -20°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 标准包装
产品目录页面: 1020 (CN2011-ZH PDF)
其它名称: 296-17161-6
bq26221
SLUS607 ? MAY 2004
APPLICATION INFORMATION
battery voltage measurement
The bq26221 senses the battery voltage on the BAT pin and reports it through register pair BATH?BATL. The
BATH (address = 0x72 – bits 0 through 2) and the BATL low-byte register (address = 0x71) contain the result
of ADC conversion on the battery voltage. The voltage is expressed in an 11-bit binary format with an LSB step
size of 2.44 mV. Bit 2 of BATH register represents the MSB and bit 0 of the BATL represent the LSB. The
full-scale voltage for this measurement is 5 V and is optimized for direct sensing in single-cell Li-Ion or Li-pol
applications (see Figure 3).
Note that Bits 3 through 7 of the BATH register store the offset information for the voltage ADC. The most
significant bit is the sign-bit followed by 4 bits of offset data.
Also note that LSB gain correction factor, in μ V, is stored in address 0x79 (byte 1 of the ID ROM) in 2’s
complement. The host is responsible for applying the LSB gain correction factor and offset to the ADC
measurements.
Correct V BAT = V BAT × (2.44 + LSB correction factor) ? offset
example 1: (If real LSB = + 2.45mV and offset = +80 mV)
in address 0x79 ? 0000 1010 (in binary) 2’s complement
in BATH (0x72) ? 0101 0XXX (in binary) signed magnitude
To calculate the correct V BAT :
LSB correction factor = +10 μ V = +0.01 mV
offset = +10 × 8 mV = 80 mV
Correct V BAT (in mV) = V BAT × (2.44 + 0.01) ? 80
example 2: (If real LSB = +2.43 mV and offset = ?80 mV
in address 0x79 ? 1111 0110 (in binary), 2’s complement
in BATH (0x72) ? 1101 0XXX (in binary), signed magnitude
To calculate the correct V BAT :
LSB correction factor = ?10 μ V= ?0.01 mV
offset = ?10 × 8 mV = ?80 mV
Correct V BAT (in mV) = V BAT × (2.44 ? 0.01) ? (?80)
10
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