参数资料
型号: BR100/03,113
厂商: NXP Semiconductors
文件页数: 1/3页
文件大小: 0K
描述: DIAC 32V 2A SOD27
产品目录绘图: Diac SOD-27 Side
Diac SOD-27 Circuit
标准包装: 1
电流 - 峰值输出: 2A
电压 - 击穿: 28 ~ 36V
电流 - 击穿: 50µA
封装/外壳: DO-204AH,DO-35,轴向
供应商设备封装: ALF2
包装: 标准包装
其它名称: 568-1767-6

Philips Semiconductors
Silicon Bi-directional Trigger Device
Product Specification
BR100/03
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Silicon bidirectional trigger device in a
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
glass envelope intended for use in
triac and thyristor trigger circuits.
V (BO)
V O
I FRM
Breakover voltage
Output voltage
Repetitive peak forward current
28
7
-
36
-
2
V
V
A
OUTLINE - SOD27
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
SYMBOL
I FRM
P tot
T stg
T j
PARAMETER
Repetitive peak forward
current
Total power dissipation
Storage temperature
Operating junction
temperature
CONDITIONS
t ≤ 10 μ s, T a ≤ 50?C; f = 60 Hz
T a = 50?C
MIN.
-
-
-55
-
MAX.
2
150
125
100
UNIT
A
mW
?C
?C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
R th j-a
R th j-lead
Thermal resistance junction to in free air
ambient
Thermal resistance junction to
leads
-
-
330
150
-
-
K/W
K/W
CHARACTERISTICS
T a = 25 ?C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V (BO)
|V (BO)+ | - |V (BO)- |
V O
I (BO)
dV (BO) /dT
t r
Breakover voltage
Breakover voltage symmetry
Output voltage
Breakover current
Temperature coefficient of
V (BO)
Risetime
I = I (BO)
I = I (BO) , see fig: 1
R L = 20 ? ; Circuit of fig: 2
V = V (BO)
I p = 0.5 A; Circuit of fig: 2
28
-
7
-
-
-
32
-
-
-
0.1
1.5
36
3.5
-
50
-
V
V
V
μ A
%/K
μ s
February 1996
1
Rev 1.100
相关PDF资料
PDF描述
BR24S256F-WE2 IC EEPROM 256KBIT 100KHZ SOP8
BR24T256FV-WE2 IC EEPROM I2C 256K 400KHZ 8-SSOP
BR25L640F-WE2 IC EEPROM SER 64KB SPI BUS 8SOP
BR25S128GUZ-WE2 IC EEPROM SPI 128KB 12-WLCSP
BR25S256F-WE2 IC EEPROM SPI 256KB 20MHZ 8-SOP
相关代理商/技术参数
参数描述
BR100-03-116 制造商:PHILIP 功能描述:
BR100-031L 制造商:未知厂家 制造商全称:未知厂家 功能描述:Replacement with:TMMDB3TG
BR100-03LL 制造商:未知厂家 制造商全称:未知厂家 功能描述:Replacement with:TMMDB3
BR100-03LLD 制造商:DIOTEC 制造商全称:Diotec Semiconductor 功能描述:Surface Mount Bidirectional Si-Trigger-Diodes
BR100-04 制造商:DIOTEC 制造商全称:Diotec Semiconductor 功能描述:Bidirectional Si-Trigger-Diodes