参数资料
| 型号： | BR24C21F-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 11/21页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1KBIT 400KHZ 8SOP |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K (128 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
BR24C21xxx Series (1K)
Datasheet
3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded,
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of
fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to LSI.
4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltages is lower than that
of GND terminal.
5) Heat design
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.
6) Terminal to terminal shortcircuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may
destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND
owing to foreign matter, LSI may be destructed.
7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluated design sufficiently
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
11/18
TSZ02201-0R2R0G100270-1-2
10.Jul.2012 Rev.001
相关PDF资料 |
PDF描述 |
|---|---|
| EMC60DRAI-S734 | CONN EDGECARD 120PS .100 R/A PCB |
| XCV600E-7BG560C | IC FPGA 1.8V C-TEMP 560-MBGA |
| XCV600E-7BG432C | IC FPGA 1.8V C-TEMP 432-MBGA |
| XCV600E-6FG676I | IC FPGA 1.8V I-TEMP 676-FBGA |
| XCV600E-6BG560I | IC FPGA 1.8V I-TEMP 560-MBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BR24C21FJ | 制造商:ROHM 制造商全称:Rohm 功能描述:ID ROM for CRT display |
| BR24C21FJ-E2 | 功能描述:IC EEPROM EDID 1K 100KHZ 8-SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR |
| BR24C21FV | 制造商:ROHM 制造商全称:Rohm 功能描述:EDID Memory (For display) |
| BR24C21FV-E2 | 功能描述:电可擦除可编程只读存储器 I2C 1K BIT 128 X 8 3.3V/5V 8PIN RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR24C32 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:I2C Serial EEPROM |
发布紧急采购，3分钟左右您将得到回复。