参数资料
| 型号： | BR24C21F-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 6/21页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1KBIT 400KHZ 8SOP |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K (128 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
BR24C21xxx Series (1K)
Datasheet
● Bidirectional mode command
○ Byte Write
When the Master generates a STOP condition, the BR24C21/F/FJ/FV begins the internal write cycle to the nonvolatile array.
S
T
A
R
T
SLAVE
ADDRESS
W
R
I
T
E
WORD
ADDRESS
DATA
S
T
O
P
SDA
LINE
1 0 1 0 * *
*
WA
* 6
WA
0
D7
D0
R A
A
A
/
C
C
C
VCLK
W K
K
K
*:Don ’t care
Figure 8. Byte Write Cycle Timing
○ Page Write
If the Master transmits the next data instead of generating a STOP condition during the byte write cycle, the
BR24C21/F/FJ/FV transfers from byte write function to page write function. After receipt of each word, the three lower
order address bits are internally incremented by one, while the high order four bits of the word address remains constant.
If the master transmits more than eight words, prior to generating the STOP condition, the address counter will “roll over,”
and the previous transmitted data will be overwritten.
S
W
T
R
S
A
R
T
SLAVE
ADDRESS
I
T
E
WORD
ADDRESS
（ ）
DATA(n)
DATA(n+7)
T
O
P
SDA
LINE
1 0 1 0 ＊ ＊ ＊
WA
* 6
WA
0
D7
D0
D0
R A
/ C
W K
A
C
K
A
C
K
A
C
K
VCLK
*:Don’t c are
Figure 9. Page Write Cycle Timing
○ Current Read
The BR24C21/F/FJ/FV contains an internal address counter which maintains the address of the last word accessed,
incremented by one. If the last accessed address is address “n” in a Read operation, the next Read operation will access
data from address “n+1” and increment the current address counter. If the last accessed address is address
”n” in a Write operation, the next Read operation will access data from address “n”. If the Master does not transfer an
Acknowledge, but does generate a STOP condition, the current address read operation will only provide a single byte of
data.
At this point, the device discontinues transmission.
(See Figure 12 Sequential Read Cycle Timing)
S
T
A
R
T
SLAVE
ADRESS
R
E
A
D
DATA
S
T
O
P
SDA
LINE
1 0 1 0 ＊ ＊ ＊
A
R
C
/
W K
D7
D0
*:Don ’ t care
A
C
K
Figure 10. Current Read Cycle Timing
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
6/18
TSZ02201-0R2R0G100270-1-2
10.Jul.2012 Rev.001
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR24C21FJ | 制造商:ROHM 制造商全称:Rohm 功能描述:ID ROM for CRT display |
| BR24C21FJ-E2 | 功能描述:IC EEPROM EDID 1K 100KHZ 8-SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR |
| BR24C21FV | 制造商:ROHM 制造商全称:Rohm 功能描述:EDID Memory (For display) |
| BR24C21FV-E2 | 功能描述:电可擦除可编程只读存储器 I2C 1K BIT 128 X 8 3.3V/5V 8PIN RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR24C32 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:I2C Serial EEPROM |
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