参数资料
型号: BR24L32FVT-WE2
厂商: Rohm Semiconductor
文件页数: 21/41页
文件大小: 0K
描述: IC EEPROM 32KBIT 400KHZ 8TSSOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 32K (4K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP-B
包装: 标准包装
产品目录页面: 1379 (CN2011-ZH PDF)
其它名称: BR24L32FVT-WE2DKR
BR24L □□ -W Series,BR24S □□□ -W Series
● Absolute maximum ratings (Ta=25 ℃ )
Technical Note
Parameter
Impressed voltage
symbol
V CC
Limits
-0.3 ~ +6.5
Unit
V
450 (SOP8) *1
450 (SOP-J8) *2
300 (SSOP-B8) *3
Permissible dissipation
Pd
330 (TSSOP-B8) *4
*5
310 (MSOP8)
mW
310 (TSSOP-B8J) *6
300 (VSON008X2030) *7
Storage temperature range
Action temperature range
Terminal voltage
Tstg
Topr
-
-65 ~ +125
-40 ~ +85
-0.3 ~ Vcc+1.0
V
*When using at Ta=25 ℃ or higher, 4.5mW(*1,*2), 3.0mW(*3,*7) 3.3mW(*4),3.1mW(*5,*6) to be reduced per 1 ℃
● Memory cell characteristics (Ta=25 ℃ , Vcc=1.7 ~ 5.5V)
Parameter
Number of data rewrite times *1
Min.
1,000,000
Limits
Typ.
-
Max.
-
Unit
Times
Data hold years
*1
40
-
-
Years
*1 Not 100% TESTED
● Recommended operating conditions
Parameter
Power source voltage
Input voltage
Symbol
Vcc
V IN
Limits
1.7 ~ 5.5
0 ~ Vcc
Unit
V
● Electrical characteristics
(Unless otherwise specified, T=-40 ~ +85 ℃ , Vcc=1.7 ~ 5.5V)
Parameter Symbol
Limits
Min Typ. Max.
Unit
Condition
"H" Input Voltage1
"L" Input Voltage1
VIH1
VIL1
0.7Vcc
-0.3
-
-
Vcc+1.0
0.3Vcc
V
V
"L" Output Voltage1
"L" Output Voltage2
Input Leakage Current
Output Leakage Current
Current consumption
at action
Standby Current
VOL1
VOL2
ILI
ILO
ICC1
ICC2
ISB
-
-
-1
-1
-
-
-
-
-
-
-
-
-
-
-
-
0.4
0.2
1
1
2.0
2.5
0.5
2.0
V
V
μ A
μ A
mA
mA
μ A
IOL=3.0mA , 2.5V ≦ Vcc ≦ 5.5V (SDA)
IOL=0.7mA , 1.7V ≦ Vcc ≦ 2.5V (SDA)
VIN=0 ~ Vcc
VOUT=0 ~ Vcc (SDA)
Vcc=5.5V , fSCL =400kHz, tWR=5ms
Byte Write, Page Write BR24S08/16/32/64-W
Vcc=5.5V , fSCL =400kHz, tWR=5ms
Byte Write, Page Write BR24S128/256-W
Vcc=5.5V , fSCL =400kHz
Random read, Current read, Sequential read
Vcc=5.5V , SDA ? SCL=Vcc
A0, A1, A2=GND, WP=GND
○ Radiation resistance design is not made.
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
21/40
2009.09 - Rev.D
相关PDF资料
PDF描述
EPF8452ALC84-4 IC FLEX 8000A FPGA 4K 84-PLCC
AGL125V2-CS196I IC FPGA 1KB FLASH 125K 196-CSP
AGL125V2-CSG196I IC FPGA 1KB FLASH 125K 196-CSP
BR25S128F-WE2 IC EEPROM SPI 128KB 20MHZ 8-SOP
A3P250-2FGG256 IC FPGA 1KB FLASH 250K 256-FBGA
相关代理商/技术参数
参数描述
BR24L32FVT-WTR 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS
BR24L32FV-W 制造商:未知厂家 制造商全称:未知厂家 功能描述:Serial 2 Wire Interface (I2C BUS Type)
BR24L32FV-WE2 功能描述:电可擦除可编程只读存储器 SRL 4KX8 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
BR24L32FV-WTR 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS
BR24L32F-W 制造商:ROHM Semiconductor 功能描述:IC,Memory,EEPROM,Serial SOP8 4Kx8 SERIA