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参数资料
| 型号： | BR24T128FJ-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 18/22页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C 128K 400KHZ 8-SOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP-J |
| 包装： | 标准包装 |
| 其它名称： | BR24T128FJ-WE2DKR |
BR24T □□□□ Series
Technical Note
● Notes for use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin
in consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded,
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case
of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it
that conditions exceeding the absolute maximum ratings should not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is lower than that
of GND terminal.
(5) Terminal design
In consideration of permissible loss in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal shortcircuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may
destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND
owing to foreign matter, LSI may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
18/21
2011.03 - Rev.A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR24T128FJWGE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
| BR24T128FJWGTR | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
| BR24T128FVJFVMWGE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
| BR24T128FVJFVMWGTR | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
| BR24T128FVJ-WE2 | 功能描述:电可擦除可编程只读存储器 Hi-Rel Serial 电可擦除可编程只读存储器 of I2C BUS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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