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参数资料
| 型号： | BR24T128FVT-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 8/22页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C 128K 400KHZ 8TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP-B |
| 包装： | 标准包装 |
| 其它名称： | BR24T128FVT-WE2DKR |
BR24T □□□□ Series
Technical Note
● Write Command
○ Write cycle
? Arbitrary data is written to EEPROM. When to write only 1 byte, byte write is normally used, and when to write
continuous data of 2 bytes or more, simultaneous write is possible by page write cycle. The maximum number of write
bytes is specified per device of each capacity. Up to 256 arbitrary bytes can be written.(In the case of BR24T1M-W)
S
W
T
A
R
I
S
T
SDA
LINE
R
T
SLAVE
ADDRESS
1 0 1 0 A2 A1 A0
T
E
WA
7
WORD
ADDRESS
WA
0
D7
DATA
D0
O
P
As for WA7, BR24T01-W becomes Don't care.
R A
A
A
Note)
/
C
C
C
W K
K
K
Fig.38 Byte write cycle
(BR24T01/02/04/08/16-W)
S
W
T
A
R
I
S
T
R
T
SLAVE
ADDRESS
T
E
1st WORD
ADDRESS
2nd WORD
ADDRESS
DATA
O
P
*1
As for WA12, BR24T32-W becomes Don't care.
SDA
As for WA13, BR24T32/64-W becomes Don't care.
LINE
1 0 1 0 A2 A1 A0
Note)
R A
/ C
WA WA WA WA WA
15 14 13 12 11
*1
A
C
WA
0
A
C
D7
D0
A
C
As for WA14, BR24T32/64/128-W becomes Don't care.
As for WA15, BR24T32/64/128/256-W becomes Don't care.
W K
K
K
K
Fig.39 Byte write cycle
(BR24T32/64/128/256/512/1M-W)
S
W
T
R
S
A
R
T
SLAVE
ADDRESS
I
T
E
W ORD
A D D R E S S (n )
D A TA (n)
*2
D A TA (n +1 5 )
T
O
P
SDA
L IN E
1 0 1 0 A 2 A 1 A 0
WA
7
WA
0
D7
D0
D0
*1
*2
As for WA7, BR24T01-W becomes Don't care.
As for BR24T01/02-W becomes (n+7)
注 )
R A
/ C *1
W K
A
C
K
A
C
K
A
C
K
Fig.40 Page write cycle
(BR24T01/02/04/08/16-W)
SDA
S
T
A
R
T
SLAVE
ADDRESS
W
R
I
T
E
1st WORD
ADDRESS(n)
2nd WORD
ADDRESS(n)
DATA(n)
*2
DATA(n+31)
S
T
O
P
*1
As for WA12, BR24T32-W becomes Don't care.
As for WA13, BR24T32/64-W becomes Don't care.
As for WA14, BR24T32/64/128-W becomes Don't care.
As for WA15, BR24T32/64/128/256-W becomes Don't care.
LINE
1 0 1
0 0
0 A2 A1 A0
注 )
R A
/ C
W K
WA WA WA WA WA
15 14 13 12 11
*1
A
C
K
WA
0
A
C
K
D7
D0
A
C
K
D0
A
C
K
*2
As for BR24T128/256-W becomes (n+63)
As for BR24T512-W becomes (n+127)
As for BR24T1M-W becomes (n+255)
Fig.41 Page write cycle
Note)
(BR24T32/64/128/256/512/1M-W)
*1 *2 *3
1 0 1 0 A 2 A 1 A 0
Fig.42 Difference of slave address of each type
*1 In BR24T16-W, A2 becomes P2.
*2 In BR24T08/16-W, A1 becomes P1.
*3 In BR24T04/08/16/1M-W A0 becomes P0.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
8/21
2011.03 - Rev.A
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相关代理商/技术参数 |
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|---|---|
| BR24T128FVTWGE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
| BR24T128FVT-WGE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
| BR24T128FVTWGTR | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
| BR24T128FV-WE2 | 功能描述:电可擦除可编程只读存储器 Hi-Rel Serial 电可擦除可编程只读存储器 of I2C BUS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR24T128FVWGE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
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