参数资料
型号: BR25L020FV-WE2
厂商: Rohm Semiconductor
文件页数: 13/17页
文件大小: 0K
描述: IC EEPROM SER 2KB SPI BUS 8SSOP
标准包装: 2,500
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 2K (256 x 8)
速度: 5MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SSOP 1 型(0.173",4.4mm 宽)
供应商设备封装: SSOP-8B
包装: 带卷 (TR)
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W
Technical Note
In order to realize more stable high speed operation, it is recommended to make the values of R PU , R PD as large as
possible, and make the amplitude of signal input to EEPROM close to the amplitude of VCC / GND level.
(*1 At this moment, operating timing guaranteed value is guaranteed.)
tPD-VIL characteristics
80
75
70
65
60
55
V CC =1.8V
Ta =25°C
VIH=V CC
C L =100pF
0
0.2
0.4
0.6
0.8
1
VIL[V]
Fig.55 V IL dependency of
data output delay time
SO load capacity condition
Load capacity of SO output pin affects upon delay characteristic of SO output. (Data output delay time, time from HOLD
to High-Z) In order to make output delay characteristic into higher speed, make SO load capacity small. In concrete, "Do
not connect many devices to SO bus", "Make the wire between the controller and EEPROM short", and so forth.
tPD-CL characteristics
80
V CC =1.8V Ta =25°C
70
60
50
40
VIH/VIL=0.8V CC /0.2V CC
EEPROM
SO
CL
0
20
40
60
80
100
120
C L [ V]
Fig.56 SO load dependency of data output delay time
Other cautions
Make the wire length from the microcontroller to EEPROM input signal same length, in order to prevent setup / hold violation
to EEPROM, owing to difference of wire length of each input.
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
13/16
2010.07 - Rev. B
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