参数资料
型号: BR25L160FJ-WE2
厂商: Rohm Semiconductor
文件页数: 12/17页
文件大小: 0K
描述: IC EEPROM 16KBIT 5MHZ 8SOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K (2K x 8)
速度: 5MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP-J
包装: 标准包装
产品目录页面: 1379 (CN2011-ZH PDF)
其它名称: BR25L160FJ-WE2DKR
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W
Technical Note
High speed operation
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.
Input pin pull up, pull down resistance
When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller
VOL, IOL from VIL characteristics of this IC.
Pull up resistance
R PU ≥
V CC - V OLM
I OLM
Microcontroller
I OHM
EEPROM
V OLM ≤
V ILE
V OLM
"L" output
V ILE
"L" input
Example) When Vcc = 5V, V ILM = 1.5V, V OLM = 0.4V, I OLM = 2mA,
from the equation ,
Fig.53 Pull up resistance
R PU ≥
R PU ≥
5-0.4
2 X 10 -3
2.3[kΩ]
With the value of Rpu to satisfy the above equation, V OLM
becomes 0.4V or higher, and with V ILE (= 1.5V), the equation
is also satisfied.
And, in order to prevent malfunction, mistake write at power ON/OFF, be sure to make CS pull up.
Pull down resistance
V OHM
EEPROM
V IHE
R PD ≥
V OHM ≥
V OHM
I OHM
V IHE
I OHM
Example) When Vcc = 5V, V OHM = Vcc - 0.5V, I OHM = 0.4mA,
V IHM = Vcc X 0.7V, from the equation ,
Fig.54 Pull down resistance
R PD ≥
R PD ≥
5-0.5
0.4 X 10 -3
11.3[kΩ]
Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting signal of amplitude of
VCC / GND level to input, more stable high speed operations can be realized. On the contrary, when amplitude of 0.8VCC /
0.2VCC is input, operation speed becomes slow.
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
12/16
2010.07 - Rev. B
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