参数资料
| 型号： | BR34E02NUX-WTR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 16/19页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C SPD 2KB 8-VSON |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 供应商设备封装： | VSON008X2030 |
| 包装： | 标准包装 |
| 其它名称： | BR34E02NUX-WDKR |
BR34E02FVT-W, BR34E02NUX-W
Technical Note
● Power Supply Notes
V CC increases through the low voltage region where the internal circuit of IC and the microcontroller are unstable. In order
to prevent malfunction, the IC has P.O.R and LV CC functionality. During power up, ensure that the following conditions are
met to guaranty P.O.R. and LV CC operability.
1. "SDA='H'" and "SCL='L' or 'H'".
2. Follow the recommended conditions of tR, tOFF, Vbot so that P.O.R. will be activated during power up.
tR
V CC
Recommended conditions of tR, tOFF, Vbot
tR
tOFF
Vbot
0
tOFF
Vbot
Below 10ms
Below 100ms
Above 10ms
Above 10ms
Below 0.3V
Below 0.2V
Fig.52 V CC rising wavefrom
3. Prevent SDA and SCL from being "Hi-Z".
In case that condition 1. and/or 2. cannot be met, take following actions.
A) If unable to keep Condition 1 (SDA is "Low" during power up)
→ Make sure that SDA and SCL are "High" as in the figure below.
V CC
tLOW
SCL
SDA
After Vcc becomes stable
After Vcc becomes stable
tDH
tSU:DAT
tSU:DAT
Fig.53 SCL="H" and SDA="L"
Fig.54 SCL="L" and SDA="L"
B) If unable to keep Condition 2
→ After the power stabilizes, execute software reset. (See page 9,10)
C) If unable to keep either Condition 1 or 2
→ Follow Instruction A first, then B
● LV CC Circuit
The LV CC circuit prevents Write operation at low voltage and prevents inadvertent writing. A voltage below the LV CC voltage
(1.2V typ.) prohibits Write operation.
● V CC Noise
○ Bypass Capacitor
Noise and surges on the power line may cause abnormal function. It is recommended that bypass capacitors (0.1μF) be
attached between V CC and GND externally.
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
16/18
2009.09 - Rev.B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR34E02NUX-WTTR | 制造商:ROHM Semiconductor 功能描述:EEPROM SERIAL-2WIRE 2K-BIT 256 X 8 1.8V/2.5V/3.3V 8-PIN VSON - Tape and Reel |
| BR34E02-W | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR/DDR2 (For memory module) SPD Memory |
| BR34L02FVT-W | 制造商:ROHM Semiconductor 功能描述: |
| BR34L02FVT-WE2 | 功能描述:电可擦除可编程只读存储器 电可擦除可编程只读存储器 Serial-2Wire 2Kb RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR34L02FVT-WSE2 | 制造商:ROHM Semiconductor 功能描述:IC EEPROM |
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