参数资料
型号: BR34E02NUX-WTR
厂商: Rohm Semiconductor
文件页数: 3/19页
文件大小: 0K
描述: IC EEPROM I2C SPD 2KB 8-VSON
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 2K (256 x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-UFDFN 裸露焊盘
供应商设备封装: VSON008X2030
包装: 标准包装
其它名称: BR34E02NUX-WDKR
BR34E02FVT-W, BR34E02NUX-W
Technical Note
■ Fast / Standard Modes
Fast mode and Standard mode differ only in operation frequency. Operations performed at 100kHz are considered in
"Standard-mode", while those conducted at 400kHz are in "Fast-mode".
Please note that these clock frequencies are maximum values. At lower power supply voltage it is difficult to operate at high speeds.
The EEPROM can operate at 400kHz, between 2.5V and 3.6V, and at 100kHz from 1.7V-2.5V.
● Synchronous Data Timing
tR
tF
tHIGH
SCL
SCL
tHD:STA
tSU:DAT tLOW
tHD:DAT
SDA
tSU:STA
tHD:STA
tSU:STO
(IN)
SDA
(OUT)
tBUF
tPD
tDH
SDA
START BIT
STOP BIT
Fig.1-(a) Synchronous Data Timing
○ SDA data is latched into the chip at the rising edge ○
of SCL clock.
○ Output data toggles at the falling edge of SCL clock.
SCL
Fig.1-(b) Start/Stop Bit Timing
SCL
DATA(1)
DATA(n)
SDA
D0
ACK
SDA
D1
D0
ACK
ACK
t WR
WRITE DATA(n)
STOP CONDITION
t WR
START CONDITION
WP
tSU : WP
Stop Condition
t HD : WP
SCL
Fig.1-(c) Write Cycle Timing
Fig.1-(d) WP Timing Of The Write Operation
DATA(1)
DATA(n)
SDA
D1
D0
ACK
ACK
tHIGH:WP
tWR
WP
Fig.1-(e) WP Timing Of The Write Cancel Operation
○ For WRITE operation, WP must be "Low" from the rising edge of the
clock (which takes in D0 of first byte) until the end of tWR. (See
Fig.1-(d) ) During this period, WRITE operation can be canceled by
setting WP "High". ( See Fig.1-(e) )
○ When WP is set to "High" during tWR, WRITE operation is
immediately ceased, making the data unreliable. It must then be
re-written.
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
3/18
2009.09 - Rev.B
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相关代理商/技术参数
参数描述
BR34E02NUX-WTTR 制造商:ROHM Semiconductor 功能描述:EEPROM SERIAL-2WIRE 2K-BIT 256 X 8 1.8V/2.5V/3.3V 8-PIN VSON - Tape and Reel
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BR34L02FVT-W 制造商:ROHM Semiconductor 功能描述:
BR34L02FVT-WE2 功能描述:电可擦除可编程只读存储器 电可擦除可编程只读存储器 Serial-2Wire 2Kb RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
BR34L02FVT-WSE2 制造商:ROHM Semiconductor 功能描述:IC EEPROM