参数资料
| 型号： | BR93L46FVT-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 34/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1KBIT 2MHZ 8TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K (64 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP-B |
| 包装： | 标准包装 |
| 产品目录页面： | 1380 (CN2011-ZH PDF) |
| 其它名称： | BR93L46FVT-WE2DKR |
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BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
Technical Note
4-2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, “HIGH-Z” gets in.
→ Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”,
READY output “H” is output from DO terminal, and through current route occurs.
Feedback input at timing of these 4-1) and 4-2) does not cause disorder in basic operations, if resistance R is inserted.
～ ～
EEPROM CS input
EEPROM SK input
EEPROM DI input
Write command
Write command
Write command
～ ～
～ ～
～ ～
～ ～
～ ～
BUSY
EEPROM DO output
Write command
～ ～
READY
～ ～
READY
High-Z
Collision of DI input and DO output
Microcontroller DI/O port
Write command
BUSY
～ ～
READY
～ ～
Microcontroller output
Microcontroller input
Microcontroller output
Fig.48 Collision timing at DI, DO direct connection
○ Selection of resistance value R
The resistance R becomes through current limit resistance at data collision. When through current flows, noises of
power source line and instantaneous stop of power source may occur. When allowable through current is defined as I,
the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so
forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL,
even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence
upon basic operations.
4-3) Address data A0 = “1” input, dummy bit “0” output timing
(When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI)
? Make the through current to EEPROM 10mA or below.
? See to it that the input level VIH of EEPROM should satisfy the following.
Conditions
Microcontroller
DI/O PORT
DI
EEPROM
VOHM ≦ VIHE
VOHM ≦ IOHM × R + VOLE
At this moment, if VOLE=0V,
“H” output
VOHM
VOHM ≦ IOHM × R
IOHM
R
DO
∴
R ≧
VOHM
IOHM
???⑦
VOLE
? VIHE
: EEPROM VIH specifications
“L” output
? VOLE
? VOHM
? IOHM
: EEPROM VOL specifications
: Microcontroller VOH specifications
: Microcontroller IOH specifications
Fig.49
Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output)
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
34/40
2011.09 - Rev.G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR93L46FV-W | 制造商:ROHM Semiconductor 功能描述:EEPROM,1kb,64Wx16b,Microwire Bus,SSOP8 |
| BR93L46FV-WE2 | 功能描述:电可擦除可编程只读存储器 3 WIRE SERIAL RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L46F-W | 制造商:ROHM Semiconductor 功能描述:IC, |
| BR93L46F-WE2 | 功能描述:电可擦除可编程只读存储器 3 WIRE SERIAL RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L46F-WE2-CUT TAPE | 制造商:ROHM 功能描述:BR93L46F Series 1 Kb (64 x 16) 5.5 V EEPROMS Microwire BUS - SOIC-8 |
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