参数资料
| 型号： | BR93L56FJ-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 29/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 2MHZ 8SOP |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (128 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP-J |
| 包装： | 带卷 (TR) |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页当前第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页
BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
● Timing chart
Technical Note
1) Read cycle (READ)
～ ～
～ ～
～ ～
CS
*1
～ ～
SK
1
2
4
～ ～
n
n+1
～ ～
～ ～
BR93H56/66-WC : n=27, m=7
DI
1
1
0
Am
～ ～
A1
A0
BR93H76/86-WC : n=29, m=9
～ ～
*2
～ ～
DO
High-Z
～ ～
0
D15
D14
～ ～
D1
D0
D15 D14
～ ～
*2 The following address data output
（ auto increment function ）
*1 Start bit
When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as a
start bit, and the following operation is started. This is common to all the commands to described hereafter .
Fig. 30 Read cycle
○ When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in
sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK.
This IC has address auto increment function valid only at read command. This is the function where after the above read
execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto increment,
keep CS at “H”.
2) Write cycle (WRITE)
CS
～～
～～
～～
～～
tCS
～～
～～
STATUS
SK
1
2
4
～～
～～
n
～～
BR93H56/66-WC : n=27, m=7
BR93H76/86-WC : n=29, m=9
DI
1
0
1
Am
～～
A1
A0
D15
D14
～～
D1
D0
～～
tSV
DO
High-Z
Fig. 31 Write cycle
BUSY
～～
tE/W
READY
In this command, input 16bit data (D15~D0) are written to designated addresses (Am~A0). The actual write starts by the fall
of CS of D0 taken SK clock(n-th clock from the start bit input), to the rise of the (n+1)-th clock.
When STATUS is not detected, (CS="L" fixed) Max. 10ms(Max.5ms:BR93H66RFVM-WC) in conformity with tE/W, and
when STATUS is detected (CS="H"), all commands are not accepted for areas where "L" (BUSY) is output from D0,
therefore, do not input any command.
Write is not made even if CS is started after input of clock after (n+1)-th clocks.
Note) Take tSKH or more from the rise of the n-th clock to the fall of CS.
3) Write all cycyle (WRAL)
CS
tCS
STATUS
SK
1
2
5
m
n
BR93H56/66-WC : n=27, m=9
BR93H76/86-WC : n=29, m=11
DI
1
0
0
0
1
B2
B1
B0
D15
D1
D0
tSV
DO
High-Z
Fig. 32 Write all cycle
BUSY
tE/W
READY
In this command, input 16bit data is written simultaneously to designated block for 128 words. Data is writen in bulk at a
write time of only Max. 10ms(Max.5ms:BR93H66RFVM-WC) in conformity with tE/W. When writing data to all addresses,
designate each block by B2, B1, and B0, and execute write. Write time is Max.10ms(Max.5ms:BR93H66RFVM-WC). The
actual write starts by the fall of CS from the rise of D0 taken at SK clock (n-th clock from the start bit input), to the rise of the
(n+1)-th clock. When CS is ended after clock input after the rise of the (n+1)-th clock, command is cancelled, and write is
not completed.
Note)Take tSKH or more from the rise of the n-th clock to the fall of CS.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
29/40
2011.09 - Rev.G
相关PDF资料 |
PDF描述 |
|---|---|
| ASM40DTAH-S189 | CONN EDGECARD 80POS R/A .156 SLD |
| XC6VCX130T-1FFG784C | IC FPGA VIRTEX 6 128K 784FFGBGA |
| XC5VLX50T-2FFG665C | IC FPGA VIRTEX-5 50K 665FCBGA |
| XC5VLX50T-2FF665C | IC FPGA VIRTEX-5 50K 665FCBGA |
| XC5VFX30T-1FF665I | IC FPGA VIRTEX-5FXT 665FFBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BR93L56F-LE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs High Reliability Series |
| BR93L56FV | 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM |
| BR93L56FVT-W | 制造商:ROHM 制造商全称:Rohm 功能描述:Microwire BUS 2Kbit(128 x 16bit) EEPROM |
| BR93L56FVT-WE2 | 功能描述:电可擦除可编程只读存储器 MICROWIRE BUS 2Kbit 1.8-5.5V Supply RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L56FV-W | 制造商:ROHM Semiconductor 功能描述:EEPROM,2kb,128Wx16b,Microwire Bus,SSOP8 |
发布紧急采购，3分钟左右您将得到回复。