参数资料
| 型号： | BR93L86RF-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 20/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 16KBIT 2MHZ 8SOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K (1K x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1380 (CN2011-ZH PDF) |
| 其它名称： | BR93L86RF-WE2DKR |
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BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
Technical Note
7) Notes on power ON/OFF
? At power ON/OFF, set CS “L”.
When CS is “H”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may
cause malfunction, mistake write or so. To prevent these, at power ON, set CS “L”. (When CS is in “L” status, all inputs
are cancelled.) And at power decline, owing to power line capacity and so forth, low power status may continue long. At
this case too, owing to the same reason, malfunction, mistake write may occur, therefore, at power OFF too, set CS “L”.
VCC
VCC
GND
VCC
CS
GND
Bad example
Good example
Fig.86 Timing at power ON/OFF
（ Bad example ） CS pin is pulled up to Vcc.
In this case, CS becomes “H” (active status), and EEPROM may have malfunction,
mistake write owing to noise and the likes.
Even when CS input is High-Z, the status becomes like this case, which please note.
（ Good example ） It is “L” at power ON/OFF.
Set 10ms or higher to recharge at power OFF.
When power is turned on without observing this condition,
IC internal circuit may not be reset, which please note.
○ POR citcuit
This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write
disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS is
“H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe the
follwing conditions.
1. Set CS=”L”
2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action.
t R
V CC
Recommended conditions of t R , t OFF , Vbot
t R
t O FF
V bot
0
t OFF
Vbot
10m s or below 10m s or higher 0.3V or below
100m s or below 10m s or higher 0.2V or below
○ LVCC circuit
Fig.87 Rise waveform diagram
LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.
At LVCC voltage (Typ.=1.2V) or below, it prevent data rewrite.
8) Noise countermeasures
○ VCC noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a by pass capacitor (0.1 μ F) between IC VCC and GND, At that moment, attach it as close to IC
as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND.
SK noise
When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock
bit displacement.To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about
0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time
(tR) of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures.
Make the clock rise, fall time as small as possible.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
20/40
2011.09 - Rev.G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR93L86-W | 功能描述:IC EEPROM 16KBIT 2MHZ 8DIP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
| BR93LC46 | 制造商:ROHM Semiconductor 功能描述: 制造商:Panasonic Industrial Company 功能描述:IC |
| BR93LC46A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microwire Serial EEPROM |
| BR93LC46AF | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microwire Serial EEPROM |
| BR93LC46F | 制造商:Panasonic Industrial Company 功能描述:IC |
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