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| 型号： | BS107AG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 250MA TO-92 |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 产品目录绘图： | MOSFET TO-92 Pkg |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 250mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.4 欧姆 @ 250mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 60pF @ 25V |
| 功率 - 最大： | 350mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3 标准主体 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 散装 |
| 其它名称： | BS107AGOS |
BS107A
Small Signal MOSFET
250 mAmps, 200 Volts
N ? Channel TO ? 92
Features
? AEC Qualified
? PPAP Capable
? This is a Pb ? Free Device*
http://onsemi.com
250 mAMPS, 200 VOLTS
R DS(on) = 6.4 W
MAXIMUM RATINGS
D
N ? Channel
Rating
Symbol
Value
Unit
Drain ? Source Voltage
V DS
200
Vdc
G
Gate ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 50 m s)
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
V GS
V GSM
I D
I DM
± 20
± 30
250
500
Vdc
Vpk
mAdc
S
MARKING
DIAGRAM
Total Device Dissipation @ T A = 25 ° C P D 350 mW
Derate above 25 ° C
Operating and Storage Junction T J , T stg ? 55 to ° C
Temperature Range 150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
1
2
3
A
Y
WW
A
BS107A
YWW G
TO ? 92 G
CASE 29 ? 11
STYLE 30
= Assembly Location
= Year
= Work Week
G
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BS107ARL1G
Package
TO ? 92
Shipping
2000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2011
April, 2011 ? Rev. 6
1
Publication Order Number:
BS107/D
相关PDF资料 |
PDF描述 |
|---|---|
| BS107PSTZ | MOSFET N-CHAN 200V TO92-3 |
| BS108G | MOSFET N-CH 200V 250MA TO-92 |
| BS120E0F | PHOTODIODE BLUE SENS 1.55MM SQ |
| BS170_L34Z | MOSFET N-CH 60V 500MA TO-92 |
| BS170RLRA | MOSFET N-CH 60V 500MA TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BS107AMO | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 130MA I(D) | TO-92VAR |
| BS107ARL1 | 功能描述:MOSFET 200V 250mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BS107ARL1G | 功能描述:MOSFET 200V 250mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BS107ARL1G | 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 200V 250mA TO-92 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET, 200V, 250mA TO-92 |
| BS107ARL1G-CUT TAPE | 制造商:ON 功能描述:BS Series N-Channel 200 V 6.4 Ohm 350 mW Through Hole Small Signal MOSFET TO-92 |
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