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| 型号： | BS108G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 250MA TO-92 |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 250mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 欧姆 @ 100mA，2.8V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 150pF @ 25V |
| 功率 - 最大： | 350mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3 标准主体 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 管件 |
BS108
Small Signal MOSFET
250 mAmps, 200 Volts,
Logic Level
N ? Channel TO ? 92
This MOSFET is designed for high voltage, high speed switching
applications such as line drivers, relay drivers, CMOS logic,
microprocessor or TTL to high voltage interface and high voltage
display drivers.
Features
http://onsemi.com
250 mAMPS
200 VOLTS
R DS(on) = 8 W
? Low Drive Requirement, V GS = 3.0 V max
? Inherent Current Sharing Capability Permits Easy Paralleling of
many Devices
? AEC Qualified
? PPAP Capable
? This is a Pb ? Free Device*
G
N ? Channel
D
S
MAXIMUM RATINGS
Rating
Drain ? Source Voltage
Gate ? Source Voltage
Symbol
V DSS
V GS
Value
200
± 20
Unit
Vdc
Vdc
MARKING
DIAGRAM
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
Total Power Dissipation
@ T A = 25 ° C
Derate above T A = 25 ° C
I D
I DM
P D
250
500
350
6.4
mAdc
mW
mW/ ° C
1
2
3
TO ? 92
CASE 29 ? 11
STYLE 30
A
BS108
YWW G
G
Operating and Storage Temperature Range
T J , T stg
? 55 to +150
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
BS108 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BS108ZL1G
Package
TO ? 92
Shipping
2000/Ammo Pack
(Pb ? Free)
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2011
April, 2011 ? Rev. 4
1
Publication Order Number:
BS108/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BS108ZL1 | 功能描述:MOSFET 200V 250mA Logic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BS108ZL1G | 功能描述:MOSFET 200V 250mA Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BS109 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:DMOS Transistors (N-Channel) |
| BS109-SM | 制造商:Panasonic Industrial Company 功能描述:SERVICE MANUAL |
| BS10-D | 功能描述:端子 Butt Splice non-ins 12 - 10 AWG RoHS:否 制造商:AVX 产品:Junction Box - Wire to Wire 系列:9826 线规:26-18 接线柱/接头大小: 绝缘: 颜色:Red 型式:Female 触点电镀:Tin over Nickel 触点材料:Beryllium Copper, Phosphor Bronze 端接类型:Crimp |
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