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| 型号： | BS108G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/3页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 250MA TO-92 |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 250mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 欧姆 @ 100mA，2.8V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 150pF @ 25V |
| 功率 - 最大： | 350mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3 标准主体 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 管件 |
BS108
PACKAGE DIMENSIONS
TO ? 92 (TO ? 226)
CASE 29 ? 11
ISSUE AM
A
B
STRAIGHT LEAD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
R
BULK PACK
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
SEATING
PLANE
P
L
K
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A
0.175 0.205
4.45 5.20
B
0.170 0.210
4.32 5.33
C
0.125 0.165
3.18 4.19
X X
H
V
G
C
D
J
D
G
H
J
K
L
N
0.016 0.021
0.045 0.055
0.095 0.105
0.015 0.020
0.500 ---
0.250 ---
0.080 0.105
0.407 0.533
1.15 1.39
2.42 2.66
0.39 0.50
12.70 ---
6.35 ---
2.04 2.66
1
N
SECTION X ? X
P
R
V
--- 0.100
0.115 ---
0.135 ---
--- 2.54
2.93 ---
3.43 ---
N
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
T
SEATING
PLANE
P
K
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B
4.32 5.33
C
3.18 4.19
G
X X
D
J
D
G
J
K
N
0.40 0.54
2.40 2.80
0.39 0.50
12.70 ---
2.04 2.66
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
V
C
P
R
1.50 4.00
2.93 ---
1
N
SECTION X ? X
V
3.43 ---
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BS108/D
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