参数资料
型号: BS170_D26Z
厂商: Fairchild Semiconductor
文件页数: 11/14页
文件大小: 0K
描述: MOSFET N-CH 60V 500MA TO-92
产品培训模块: High Voltage Switches for Power Processing
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 500mA
开态Rds(最大)@ Id, Vgs @ 25° C: 5 欧姆 @ 200mA,10V
Id 时的 Vgs(th)(最大): 3V @ 1mA
输入电容 (Ciss) @ Vds: 40pF @ 10V
功率 - 最大: 830mW
安装类型: 通孔
封装/外壳: TO-226-3、TO-92-3(TO-226AA)成形引线
供应商设备封装: TO-92-3
包装: 剪切带 (CT)
其它名称: BS170_D26ZCT
SOT-23 Std Tape and Reel Data
SOT23-3L Packaging
Configuration: F igure 1.0
Cus tomized Lab el
Antis tatic Cover Tape
Packaging Description:
S OT 23-3L par ts ar e s hipped i n tape. T he carrier tape is
made from a d issipative (carbon filled) polycarbonate
resin. T he cover tape i s a m ultilay er film (Heat Activated
Adhes ive in nature) primarily c omposed o f polyester film,
adhes ive l ayer, seal ant, and anti-static s prayed ag ent.
T hes e reeled parts i n s tandard option ar e s hipped with
3, 000 units per 7 " or 177mm diameter reel. T he r eels ar e
dark blue in c olor and is made of polystyrene plas tic ( anti-
static coated). O ther option c omes in 10,000 units per 13"
or 330c m diameter reel. T his and s ome other options ar e
des cribed in the P ackaging I nformation table.
T hes e f ull reel s are i ndividually labeled and plac ed inside
a s tandar d immediate bo x made o f recyclable corrugated
brown paper w ith a F airchild logo p rinting. One box
contains five reel s maximum. And thes e immediate boxes
are plac ed inside a labeled s hipping box which c omes i n
F63TNR Lab el
E mbosse d
Carri er Tape
different s izes depending on the number of parts s hipped.
3P
3P
3P
3P
SOT23-3L Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
S tandar d
(no flow code)
TN R
3, 000
7" Dia
193x 183x80
15, 000
0. 0082
0. 1175
D87Z
TN R
10, 000
13"
355x 333x40
30, 000
0. 0082
0. 4006
SOT23-3L Unit Orientation
B arcode L abel
Note/Comments
B arcode
355m m x 333m m x 40m m
Intermediate c ontainer f or 13" re el option
Lab el
B arcode L abel s ample
LO T : CB V K 741B 019
F S ID: MMS Z5221B
D/C1: D9842AB QT Y 1: SPEC REV:
D/C2: QT Y 2: CP N:
QT Y : 3000
SPEC :
B arcode
Lab el
F AIRCHI LD S E MIC ONDUCT OR C ORP OR AT ION
(F 63T NR)
193m m x 183m m x 80m m
P izza B ox for S tandard O ption
SOT23-3L Tape Leader and Trailer
Configuration: F igure 2.0
C arrier Tape
C over T ape
Tr ailer Ta pe
C omponents
Leade r T ape
300mm minimum or
75 em pty pock ets
?2001 Fairchild Semiconductor Corporation
? 2010 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E2
11
500mm minimum or
125 em pty pockets
October 2004, Rev. D1
www.fairchildsemi.com
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相关代理商/技术参数
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BS170-D27Z 功能描述:MOSFET N-CH 60V 500MA TO-92 制造商:on semiconductor 系列:- 包装:剪切带(CT) 零件状态:在售 FET 类型:N 沟道 技术:MOSFET(金属氧化物) 漏源电压(Vdss):60V 电流 - 连续漏极(Id)(25°C 时):500mA(Ta) 驱动电压(最大 Rds On,最小 Rds On):10V 不同 Id 时的 Vgs(th)(最大值):3V @ 1mA Vgs(最大值):±20V 不同 Vds 时的输入电容(Ciss)(最大值):40pF @ 10V FET 功能:- 功率耗散(最大值):830mW(Ta) 不同?Id,Vgs 时的?Rds On(最大值):5 欧姆 @ 200mA,10V 工作温度:-55°C ~ 150°C(TJ) 安装类型:通孔 供应商器件封装:TO-92-3 封装/外壳:TO-226-3,TO-92-3(TO-226AA)(成形引线) 基本零件编号:BS170 标准包装:1
BS170-D74Z 功能描述:MOSFET N-CH 60V 500MA TO-92 制造商:on semiconductor 系列:- 包装:剪切带(CT) 零件状态:在售 FET 类型:N 沟道 技术:MOSFET(金属氧化物) 漏源电压(Vdss):60V 电流 - 连续漏极(Id)(25°C 时):500mA(Ta) 驱动电压(最大 Rds On,最小 Rds On):10V 不同 Id 时的 Vgs(th)(最大值):3V @ 1mA Vgs(最大值):±20V 不同 Vds 时的输入电容(Ciss)(最大值):40pF @ 10V FET 功能:- 功率耗散(最大值):830mW(Ta) 不同?Id,Vgs 时的?Rds On(最大值):5 欧姆 @ 200mA,10V 工作温度:-55°C ~ 150°C(TJ) 安装类型:通孔 供应商器件封装:TO-92-3 封装/外壳:TO-226-3,TO-92-3(TO-226AA)(成形引线) 基本零件编号:BS170 标准包装:1
BS170-D75Z 功能描述:MOSFET N-CH 60V 500MA TO-92 制造商:on semiconductor 系列:- 包装:剪切带(CT) 零件状态:在售 FET 类型:N 沟道 技术:MOSFET(金属氧化物) 漏源电压(Vdss):60V 电流 - 连续漏极(Id)(25°C 时):500mA(Ta) 驱动电压(最大 Rds On,最小 Rds On):10V 不同 Id 时的 Vgs(th)(最大值):3V @ 1mA Vgs(最大值):±20V 不同 Vds 时的输入电容(Ciss)(最大值):40pF @ 10V FET 功能:- 功率耗散(最大值):830mW(Ta) 不同?Id,Vgs 时的?Rds On(最大值):5 欧姆 @ 200mA,10V 工作温度:-55°C ~ 150°C(TJ) 安装类型:通孔 供应商器件封装:TO-92-3 封装/外壳:TO-226-3,TO-92-3(TO-226AA)(成形引线) 基本零件编号:BS170 标准包装:1
BS170F 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 60V, 150mA, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:150mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:3 ;RoHS Compliant: Yes
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