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参数资料
| 型号： | BS170/E7 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 209K |
| 代理商： | BS170/E7 |
BS170
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88179
2
10-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
ID = 100
A, VGS = 0
60
80
—
V
Gate-Source Threshold Voltage
VGS(th)
VGS = VDS, ID = 1mA
1.0
2
3.0
V
Gate-Body Leakage Current
IGSS
VGS = 15V, VDS = 0
——
10
nA
Drain Cutoff Current
IDSS
VDS = 25V, VGS = 0
——
0.5
A
Drain-Source ON Resistance
RDS(on)
VGS = 10V, ID = 0.2A
—
3.5
5.0
Forward Transconductance
gm
VDS = 10V, ID = 0.2A
—
200
—
mS
f = 1MHz
Input Capacitance
Ciss
VDS = 10V, VGS = 0,
—
30
—
pF
f = 1MHz
Turn-On Time
ton
VGS = 10V, VDS = 10V
—
5
—
ns
Turn-Off Time
toff
RD = 100
—
15
—
ns
Inverse Diode
Parameters
Symbol
Test Condition
Value
Unit
Maximum Forward Current (continuous)
IF
Tamb = 25 °C
0.5
A
Forward Voltage Drop (typ.)
VF
VGS = 0, IF = 0.5 A
0.85
V
Tj = 25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BS170F | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 60V, 150mA, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:150mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:3 ;RoHS Compliant: Yes |
| BS170F | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 |
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| BS170FTA-CUT TAPE | 制造商:DIODES 功能描述:BS170 Series 60 V 5 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23 |
| BS170FTC | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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