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参数资料
| 型号： | BS616LV1611FIP55 |
| 厂商： | BRILLIANCE SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| 中文描述： | 1M X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封装： | 9 X 12 MM, BGA-48 |
| 文件页数： | 1/11页 |
| 文件大小： | 225K |
| 代理商： | BS616LV1611FIP55 |
Very Low Power CMOS SRAM
1M X 16 bit
BS616LV1611
R0201-BS616LV1611
Revision
2.4
Oct.
2008
1
Green package materials are compliant to RoHS
FEATURES
Wide VCC operation voltage : 2.4V ~ 5.5V
Very low power consumption :
VCC = 3.0V
Operation current : 46mA (Max.)at 55ns
2mA (Max.)at 1MHz
Standby current :
16uA (Max.) at 85
OC
VCC = 5.0V
Operation current : 115mA (Max.)at 55ns
10mA (Max.)at 1MHz
Standby current :
100uA (Max.) at 85
OC
High speed access time :
-55
55ns(Max.) at VCC=3.0~5.5V
-70
70ns(Max.) at VCC=2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE2, CE1 and OE options
I/O Configuration x8/x16 selectable by LB and UB pin.
Three state outputs and TTL compatible
Fully static operation, no clock, no refresh
Data retention supply voltage as low as 1.5V
DESCRIPTION
The BS616LV1611 is a high performance, very low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
current of 16/100uA at Vcc=3/5V at 85
OC and maximum access time
of 55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE1), active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BS616LV1611 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV1611 is available in 48-pin TSOP Type I package and
48-ball BGA package.
POWER CONSUMPTION
POWER DISSIPATION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
VCC=5.0V
VCC=3.0V
PRODUCT
FAMILY
OPERATING
TEMPERATURE
VCC=5.0V VCC=3.0V
1MHz
10MHz
fMax.
1MHz
10MHz
fMax.
PKG TYPE
BS616LV1611FI
BGA-48-0912
BS616LV1611TI
Industrial
-40
OC to +85OC
100uA
16uA
10mA
50mA
115mA
2mA
20mA
46mA
TSOP I-48
PIN CONFIGURATIONS
BLOCK DIAGRAM
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 16384
Column I/O
Write Driver
Sense Amp
Column Decoder
Address Input Buffer
A16
A0 A1 A2
Data
Input
Buffer
Control
DQ0
.
DQ15
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
16
10
1024
16384
1024
10
A14
Data
Output
Buffer
A18
CE2
CE1
WE
OE
UB
LB
VCC
VSS
A3
.
A17
A15
A19
A4
A3
A2
A1
A0
CE1
DQ0
DQ1
DQ2
DQ3
VCC
NC
VSS
DQ4
DQ5
DQ6
DQ7
A19
WE
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
BS616LV1611TC
BS616LV1611TI
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A5
A6
A7
OE
UB
LB
CE2
NC
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
G
H
F
E
D
C
B
A
1
2
3
4
5
6
A9
A11
A10
NC
A12
A14
A13
A15
WE
D13
D5
D7
D6
A17
A16
A7
VSS
VCC
D12
D11
D4
D3
NC
A5
OE
A3
A0
A6
A4
A1
A2
CE2
UB
D10
D1
CE1
D2
D0
48-ball BGA top view
LB
D8
D9
VSS
VCC
D14
D15
A18
A19
A8
相关PDF资料 |
PDF描述 |
|---|---|
| BS616LV1611FIP70 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1622 | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
| BS616LV1622TC | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BS616LV1611FIP70 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1611TIG55 | 制造商:Brilliance Semiconductor Inc 功能描述:SRAM 16M 1MX16 2.4-5.5V SMD 616 |
| BS616LV1613 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC-55 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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