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参数资料
| 型号： | BS616LV1611FIP55 |
| 厂商： | BRILLIANCE SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| 中文描述： | 1M X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封装： | 9 X 12 MM, BGA-48 |
| 文件页数： | 4/11页 |
| 文件大小： | 225K |
| 代理商： | BS616LV1611FIP55 |
BS616LV1611
R0201-BS616LV1611
Revision
2.4
Oct.
2008
2
PIN DESCRIPTIONS
Name
Function
A0-A19 Address Input
These 20 address inputs select one of the 1,048,576 x 16 bit in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read form or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0-DQ15 Data Input/Output
Ports
16 bi-directional ports are used to read data from or write data into the RAM.
VCC
Power Supply
VSS
Ground
TRUTH TABLE
MODE
CE1
CE2
WE
OE
LB
UB
DQ0~DQ7 DQ8~DQ15 VCC CURRENT
H
X
High Z
ICCSB, ICCSB1
X
L
X
High Z
ICCSB, ICCSB1
Chip De-selected
(Power Down)
X
H
High Z
ICCSB, ICCSB1
L
H
L
X
High Z
ICC
Output Disabled
L
H
X
L
High Z
ICC
L
DOUT
ICC
H
L
High Z
DOUT
ICC
Read
L
H
L
H
DOUT
High Z
ICC
L
DIN
ICC
H
L
X
DIN
ICC
Write
L
H
L
X
L
H
DIN
X
ICC
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
相关PDF资料 |
PDF描述 |
|---|---|
| BS616LV1611FIP70 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1622 | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
| BS616LV1622TC | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BS616LV1611FIP70 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1611TIG55 | 制造商:Brilliance Semiconductor Inc 功能描述:SRAM 16M 1MX16 2.4-5.5V SMD 616 |
| BS616LV1613 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC-55 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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