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参数资料
| 型号： | BS616LV1611FIP55 |
| 厂商： | BRILLIANCE SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| 中文描述： | 1M X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封装： | 9 X 12 MM, BGA-48 |
| 文件页数： | 6/11页 |
| 文件大小： | 225K |
| 代理商： | BS616LV1611FIP55 |
BS616LV1611
R0201-BS616LV1611
Revision
2.4
Oct.
2008
4
DATA RETENTION CHARACTERISTICS (TA = -40
OC to +85OC)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
VCC for Data Retention
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
1.5
--
V
ICCDR
(3)
Data Retention Current
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
--
0.8
8.0
uA
tCDR
Chip Deselect to Data
Retention Time
0
--
ns
tR
Operation Recovery Time
See Retention Waveform
tRC
(2)
--
ns
1. VCC=1.5V, TA=25
OC and not 100% tested.
2. tRC = Read Cycle Time.
3. ICCDR(Max.) is 4.0uA at TA=70
OC.
LOW VCC DATA RETENTION WAVEFORM (1) (CE1 Controlled)
LOW VCC DATA RETENTION WAVEFORM (2) (CE2 Controlled)
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
0.5Vcc
tCLZ, tOLZ, tCHZ, tOHZ, tWHZ
CL = 5pF+1TTL
Output Load
Others
CL = 30pF+1TTL
1. Including jig and scope capacitance.
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM “H” TO “L”
WILL BE CHANGE
FROM “H” TO “L”
MAY CHANGE
FROM “L” TO “H”
WILL BE CHANGE
FROM “L” TO “H”
DON’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
CE2
Data Retention Mode
VCC
tCDR
VCC
tR
VIL
VCC
VDR≧1.5V
CE2≦0.2V
Data Retention Mode
VCC
tCDR
VCC
tR
VIH
CE1≧VCC - 0.2V
VDR≧1.5V
CE1
VCC
CL
(1)
1 TTL
Output
ALL INPUT PULSES
→ ←
90%
VCC
GND
Rise Time:
1V/ns
Fall Time:
1V/ns
90%
→ ←
10%
相关PDF资料 |
PDF描述 |
|---|---|
| BS616LV1611FIP70 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1622 | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
| BS616LV1622TC | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BS616LV1611FIP70 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1611TIG55 | 制造商:Brilliance Semiconductor Inc 功能描述:SRAM 16M 1MX16 2.4-5.5V SMD 616 |
| BS616LV1613 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC-55 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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