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参数资料
| 型号： | BS616LV1611FIP55 |
| 厂商： | BRILLIANCE SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| 中文描述： | 1M X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封装： | 9 X 12 MM, BGA-48 |
| 文件页数： | 9/11页 |
| 文件大小： | 225K |
| 代理商： | BS616LV1611FIP55 |
BS616LV1611
R0201-BS616LV1611
Revision
2.4
Oct.
2008
7
AC ELECTRICAL CHARACTERISTICS (TA = -40
OC to +85OC)
WRITE CYCLE
CYCLE TIME : 55ns
(VCC=3.0~5.5V)
CYCLE TIME : 70ns
(VCC=2.7~5.5V)
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tWC
Write Cycle Time
55
--
70
--
ns
tAVWL
tAS
Address Set up Time
0
--
0
--
ns
tAVWH
tAW
Address Valid to End of Write
55
--
70
--
ns
tELWH
tCW
Chip Select to End of Write
55
--
70
--
ns
tBLWH
tBW
Data Byte Control to End of Write
(LB, UB)
25
--
30
--
ns
tWLWH
tWP
Write Pulse Width
30
--
35
--
ns
tWHAX1
tWR1
Write Recovery Time
(CE1, WE)
0
--
0
--
ns
tWHAX2
tWR2
Write Recovery Time
(CE2)
0
--
0
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
25
--
30
ns
tDVWH
tDW
Data to Write Time Overlap
25
--
30
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
0
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
25
--
30
ns
tWHQX
tOW
End of Write to Output Active
5
--
5
--
ns
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
tWC
tWR1
(3)
tCW
(11)
tWP
(2)
tAW
tOHZ
(4,10)
tAS
tWR2
(3)
tDH
tDW
DIN
DOUT
WE
LB, UB
CE1
OE
ADDRESS
(5)
tBW
tCW
(11)
CE2
(5)
相关PDF资料 |
PDF描述 |
|---|---|
| BS616LV1611FIP70 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1622 | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
| BS616LV1622TC | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BS616LV1611FIP70 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1611TIG55 | 制造商:Brilliance Semiconductor Inc 功能描述:SRAM 16M 1MX16 2.4-5.5V SMD 616 |
| BS616LV1613 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC-55 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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