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参数资料
| 型号： | BS616LV1611FIP55 |
| 厂商： | BRILLIANCE SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| 中文描述： | 1M X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封装： | 9 X 12 MM, BGA-48 |
| 文件页数： | 3/11页 |
| 文件大小： | 225K |
| 代理商： | BS616LV1611FIP55 |
BS616LV1611
R0201-BS616LV1611
Revision
2.4
Oct.
2008
11
Revision History
Revision No.
History
Draft Date
Remark
2.2
Add Icc1 characteristic parameter
Jan. 13, 2006
Improve Iccsb1 spec.
I-grade from 220uA to 100uA at 5.0V
20uA to 16uA at 3.0V
C-grade from 110uA to 50uA at 5.0V
10uA to 8.0uA at 3.0V
2.3
Change I-grade operation temperature range
May. 25, 2006
- from –25OC to –40OC
2.4
Typical value of standby current is replaced by
Oct. 31, 2008
maximum value in Featues and Description
section
Remove “-: Normal” (Leaded) PKG Material in
ordering information
相关PDF资料 |
PDF描述 |
|---|---|
| BS616LV1611FIP70 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1622 | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
| BS616LV1622TC | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BS616LV1611FIP70 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1611TIG55 | 制造商:Brilliance Semiconductor Inc 功能描述:SRAM 16M 1MX16 2.4-5.5V SMD 616 |
| BS616LV1613 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1613FC-55 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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