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参数资料
| 型号： | BS616LV1611FIP55 |
| 厂商： | BRILLIANCE SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| 中文描述： | 1M X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封装： | 9 X 12 MM, BGA-48 |
| 文件页数： | 5/11页 |
| 文件大小： | 225K |
| 代理商： | BS616LV1611FIP55 |
BS616LV1611
R0201-BS616LV1611
Revision
2.4
Oct.
2008
3
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
PARAMETER
RATING
UNITS
VTERM
Terminal Voltage with
Respect to GND
-0.5
(2) to 7.0
V
TBIAS
Temperature Under
Bias
-40 to +125
OC
TSTG
Storage Temperature
-60 to +150
OC
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns.
OPERATING RANGE
RANG
AMBIENT
TEMPERATURE
VCC
Commercial
0
OC to + 70OC
2.4V ~ 5.5V
Industrial
-40
OC to + 85OC
2.4V ~ 5.5V
CAPACITANCE
(1) (T
A = 25
OC, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
CIN
Input
Capacitance
VIN = 0V
6
pF
CIO
Input/Output
Capacitance
VI/O = 0V
8
pF
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS (TA = -40
OC to +85OC)
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
VCC
Power Supply
2.4
--
5.5
V
VIL
Input Low Voltage
-0.5
(2)
--
0.8
V
VIH
Input High Voltage
2.2
--
VCC+0.3
(3)
V
IIL
Input Leakage Current
VIN = 0V to VCC,
CE1 = VIH or CE2 = VIL
--
1
uA
ILO
Output Leakage Current
VI/O = 0V to VCC
,
CE1 = VIH or CE2 = VIL or OE = VIH
--
1
uA
VOL
Output Low Voltage
VCC = Max, IOL = 2.0mA
--
0.4
V
VOH
Output High Voltage
VCC = Min, IOH = -1.0mA
2.4
--
V
VCC=3.0V
46
ICC
(5)
Operating Power Supply
Current
CE1 = VIL and CE2 = VIH,
IDQ = 0mA, f = FMAX
(4)
VCC=5.0V
--
115
mA
VCC=3.0V
2
ICC1
Operating Power Supply
Current
CE1 = VIL and CE2 = VIH,
IDQ = 0mA, f = 1MHz
VCC=5.0V
--
10
mA
VCC=3.0V
1.0
ICCSB
Standby Current – TTL
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA
VCC=5.0V
--
2.0
mA
VCC=3.0V
1.5
16
ICCSB1
(6)
Standby Current – CMOS
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
VCC=5.0V
--
6.0
100
uA
1. Typical characteristics are at TA=25
OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. ICC (MAX.) is 45mA/113mA at VCC=3.0V/5.0V and TA=70
OC.
6. ICCSB1(MAX.) is 8.0uA/50uA at VCC=3.0V/5.0V and TA=70
OC.
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| BS616LV1611FIP70 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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