参数资料
型号: BS170
厂商: ON Semiconductor
文件页数: 1/4页
文件大小: 0K
描述: MOSFET N-CH 60V 500MA TO-92
产品变化通告: LTB Notification 03/Jan/2008
标准包装: 1,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 500mA
开态Rds(最大)@ Id, Vgs @ 25° C: 5 欧姆 @ 200mA,10V
Id 时的 Vgs(th)(最大): 3V @ 1mA
输入电容 (Ciss) @ Vds: 60pF @ 10V
功率 - 最大: 350mW
安装类型: 通孔
封装/外壳: TO-226-3、TO-92-3 标准主体
供应商设备封装: TO-92-3
包装: 管件
其它名称: BS170OS
BS170G
Small Signal MOSFET
500 mA, 60 Volts
N ? Channel TO ? 92 (TO ? 226)
Features
? This is a Pb ? Free Device*
MAXIMUM RATINGS
Rating
Drain ? Source Voltage
Gate ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 50 m s)
Drain Current (Note)
Total Device Dissipation @ T A = 25 ° C
Operating and Storage Junction
Temperature Range
Symbol
V DS
V GS
V GSM
I D
P D
T J , T stg
Value
60
± 20
± 40
0.5
350
? 55 to
+150
Unit
Vdc
Vdc
Vpk
Adc
mW
° C
http://onsemi.com
500 mA, 60 Volts
R DS(on) = 5.0 W
N ? Channel
D
G
S
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current.
12
3
TO ? 92 (TO ? 226)
CASE 29
STYLE 30
MARKING DIAGRAM
& PIN ASSIGNMENT
BS170
AYWW G
G
1
Drain
2
Gate
3
Source
A = Assembly Location
Y = Year
WW = Work Week
G
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2011
April, 2011 ? Rev. 6
1
Publication Order Number:
BS170/D
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