- 您现在的位置：买卖IC网 > PDF目录295169 > BS62UV1027PIP85 (BRILLIANCE SEMICONDUCTOR, INC.) Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit PDF资料下载
参数资料
| 型号： | BS62UV1027PIP85 |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| 中文描述： | 超低功率/电压CMOS SRAM的128K的× 8位 |
| 文件页数： | 4/10页 |
| 文件大小： | 434K |
| 代理商： | BS62UV1027PIP85 |
Revision 2.1
Jan.
2004
3
R0201-BS62UV1027
BSI
BS62UV1027
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
Vcc=2.0V
0.6
VIL
Guaranteed Input Low
Voltage
(2)
Vcc=3.0V
-0.3
(5)
--
0.8
V
Vcc=2.0V
1.4
VIH
Guaranteed Input High
Voltage
(2)
Vcc=3.0V
2.0
--
Vcc+0.3
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
1
uA
ILO
Output Leakage Current
Vcc = Max, CE1= VIH, CE2= VIL, or
OE = VIH, VI/O = 0V to Vcc
--
1
uA
Vcc = Max, IOL = 0.1mA
Vcc=2.0V
0.2
VOL
Output Low Voltage
Vcc = Max, IOL = 2.0mA
Vcc=3.0V
--
0.4
V
Vcc = Min, IOH = -0.1mA
Vcc=2.0V
Vcc-0.2
VOH
Output High Voltage
Vcc = Min, IOH = -1.0mA
Vcc=3.0V
2.4
--
V
Vcc=2.0V
--
8
ICC
Operating Power Supply
Current
CE1 = VIL, CE2 = VIH,
IDQ = 0mA, F = Fmax
(3)
Vcc=3.0V
--
15
mA
Vcc=2.0V
--
0.1
ICCSB
Standby Current-TTL
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA
Vcc=3.0V
--
0.5
mA
Vcc=2.0V
--
0.05
1.0
ICCSB1
(4)
Standby Current-CMOS
CE1≧Vcc-0.2V or CE2≦0.2V,
VIN≧Vcc-0.2V or VIN≦0.2V
Vcc=3.0V
--
0.10
2.5
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC .
4. IccSB1(Max.) is 0.5uA/1.3uA at Vcc=2.0V/3.0V and TA=70oC.
5. VIL = -1.5V for pulse width less than 30ns
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
1. Vcc = 1.2V, TA = + 25OC
2. t
RC = Read Cycle Time
3. IccDR(Max.) is 0.2uA at TA=70OC.
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
CE1
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIH
Vcc
VDR
1.2V
≥
CE1
Vcc - 0.2V
≥
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.2
--
V
ICCDR
(3)
Data Retention Current
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.03
0.3
uA
tCDR
Chip Deselect to Data
Retention Time
0
--
ns
tR
Operation Recovery Time
See Retention Waveform
TRC
(2)
--
ns
CE2
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIL
Vcc
VDR ≧ 1.2V
CE2 ≦ 0.2V
相关PDF资料 |
PDF描述 |
|---|---|
| BS62UV1027SC | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1027SCG85 | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1027SCP10 | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1027SCP85 | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1027SI | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
| BS6322 | 制造商:n/a 功能描述:Ships in 2 days |
| BS-632-2 | 制造商:PennEngineering (PEM) 功能描述: |
| BS640GBC3V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| BS640GBC4V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
发布紧急采购，3分钟左右您将得到回复。