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参数资料
| 型号： | BS62UV1027SCP10 |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| 中文描述： | 超低功率/电压CMOS SRAM的128K的× 8位 |
| 文件页数： | 1/10页 |
| 文件大小： | 434K |
| 代理商： | BS62UV1027SCP10 |
Revision 2.1
Jan.
2004
1
R0201-BS62UV1027
Ultra Low Power/Voltage CMOS SRAM
128K X 8 bit
Wide Vcc operation voltage :
C-grade : 1.8V ~ 3.6V
I-grade : 1.9V ~ 3.6V
(Vcc_min.=1.65V at 25oC)
Ultra low power consumption :
Vcc = 2.0V
C-grade : 7mA (Max.) operating current
I -grade : 8mA (Max.) operating current
0.05uA (Typ.) CMOS standby current
Vcc = 3.0V
C-grade : 13mA (Max.) operating current
I- grade : 15mA (Max.) operating current
0.10uA (Typ.) CMOS standby current
High speed access time :
-85
85ns (Max.)
-10
100ns (Max.)
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
The BS62UV1027 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.05uA at 2.0V/25oC and maximum access time of 85ns at 85oC.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62UV1027 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV1027 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
mm STSOP and 8mmx20mm TSOP.
DESCRIPTION
FEATURES
BLOCK DIAGRAM
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
BS62UV1027
A7
Address
Input
Buffer
Row
Decoder
Memory Array
1027 x 1027
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
Address Input Buffer
A3 A2 A1 A0 A10
Data
Buffer
Input
Control
Gnd
Vdd
OE
WE
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A14
A9
A11
A8
A13
A12
A6
8
14
128
1027
20
A16
A15
A4
A5
CE2
BSI
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
BS62UV1027TC
BS62UV1027STC
BS62UV1027TI
BS62UV1027STI
POWER DISSIPATION
SPEED
(ns)
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=
3.0V
Vcc=
2.0V
Vcc=
3.0V
Vcc=
2.0V
PKG TYPE
BS62UV1027SC
SOP-32
BS62UV1027TC
TSOP-32
BS62UV1027JC
SOJ-32
BS62UV1027STC
STSOP -32
BS62UV1027PC
PDIP-32
BS62UV1027DC
+0
O C to +70 O C1.8V ~ 3.6V
85/100
1.3uA
0.5uA
13mA
7mA
DICE
BS62UV1027SI
SOP-32
BS62UV1027TI
TSOP-32
BS62UV1027JI
SOJ-32
BS62UV1027STI
STSOP -32
BS62UV1027PI
PDIP- 32
BS62UV1027DI
-40
O C to +85 O C1.9V ~ 3.6V
85/100
2.5uA
1.0uA
15mA
8mA
DICE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BS62UV1027SC
BS62UV1027SI
BS62UV1027PC
BS62UV1027PI
BS62UV1027JC
BS62UV1027JI
Data retention supply voltage as low as 1.2V
Easy expansion with CE2, CE1 and OE options
C-grade:1.8~3.6V
I-grade:1.9~3.6V
相关PDF资料 |
PDF描述 |
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| BS62UV1027SCP85 | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
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| BS62UV1027SIP85 | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1027STC | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
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