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参数资料
| 型号： | BS62UV1027SCP10 |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| 中文描述： | 超低功率/电压CMOS SRAM的128K的× 8位 |
| 文件页数： | 9/10页 |
| 文件大小： | 434K |
| 代理商： | BS62UV1027SCP10 |
Revision 2.1
Jan.
2004
8
R0201-BS62UV1027
ORDERING INFORMATION
BSI
BS62UV1027
PACKAGE DIMENSIONS
BASE METAL
WITH PLATING
c c1
SECTION A-A
b1
b
SOP -32
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
PACKAGE
J: SOJ
S: SOP
P: PDIP
T: TSOP (8mm x 20mm)
ST: Small TSOP (8mm x 13.4mm)
D: DICE
BS62UV1027 X X
Z
Y Y
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
SPEED
85: 85ns
10: 100ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
相关PDF资料 |
PDF描述 |
|---|---|
| BS62UV1027SCP85 | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1027SI | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1027SIP10 | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1027SIP85 | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1027STC | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
| BS6322 | 制造商:n/a 功能描述:Ships in 2 days |
| BS-632-2 | 制造商:PennEngineering (PEM) 功能描述: |
| BS640GBC3V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| BS640GBC4V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
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