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参数资料
| 型号： | BS62UV1027SCP10 |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| 中文描述： | 超低功率/电压CMOS SRAM的128K的× 8位 |
| 文件页数： | 5/10页 |
| 文件大小： | 434K |
| 代理商： | BS62UV1027SCP10 |
Revision 2.1
Jan.
2004
4
R0201-BS62UV1027
AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
READ CYCLE
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
MUST BE
STEADY
MAY CHANGE
FROM H TO L
DON T CARE:
ANY CHANGE
PERMITTED
DOES NOT
APPLY
MUST BE
STEADY
WILL BE
CHANGE
FROM H TO L
CHANGE :
STATE
UNKNOWN
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
BSI
BS62UV1027
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output
Timing Reference Level
0.5Vcc
Output Load
CL = 30pF+1TTL
CL = 100pF+1TTL
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
CYCLE TIME : 85ns
(Vcc = 1.9~3.6V)
UNIT
t
AVAX
t
RC
Read Cycle Time
85
--
100
--
ns
t
AVQV
t
AA
Address Access Time
--
85
--
100
ns
t
E1LQV
t
ACS1
Chip Select Access Time
--
85
--
100
ns
t
E2HOV
t
ACS2
--
85
--
100
ns
t
GLQV
t
OE
Output Enable to Output Valid
--
40
--
50
ns
t
E1LQX
t
CLZ1
Chip Select to Output Low Z
15
--
15
--
ns
t
E2HOX
t
CLZ2
15
--
15
--
ns
t
GLQX
t
OLZ
Output Enable to Output in Low Z
15
--
15
--
ns
t
E1HQZ
t
CHZ1
Chip Deselect to Output in High Z
--
35
--
40
ns
t
E2HQZ
t
CHZ2
--
35
--
40
ns
t
GHQZ
t
OHZ
Output Disable to Output in High Z
--
30
--
35
ns
t
AXOX
t
OH
Data Hold from Address Change
15
--
15
--
ns
MIN. TYP. MAX.
Chip Select Access Time
(CE2)
(CE1)
Chip Select to Output Low Z
(CE1)
(CE2)
Chip Deselect to Output in High Z
(CE1)
(CE2)
CYCLE TIME : 100ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
| BS6322 | 制造商:n/a 功能描述:Ships in 2 days |
| BS-632-2 | 制造商:PennEngineering (PEM) 功能描述: |
| BS640GBC3V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| BS640GBC4V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
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