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参数资料
| 型号： | BS62UV256JC |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit |
| 中文描述： | 超低功率/电压CMOS SRAM的32K的× 8位 |
| 文件页数： | 4/11页 |
| 文件大小： | 331K |
| 代理商： | BS62UV256JC |
Revision 2.2
April 2001
2
BSI
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
CIN
Input
Capacitance
VIN=0V
6
pF
CDQ
Input/Output
Capacitance
VI/O=0V
8
pF
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0 O C to +70 O C1.8V ~ 3.6V
Industrial
-40 O C to +85 O C1.8V ~ 3.6V
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
1. This parameter is guaranteed and not tested.
SYMBOL
PARAMETER
RATING
UNITS
V TERM
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
V
T BIAS
Temperature Under Bias
C
-40 to +125
O
T STG
Storage Temperature
C
-60 to +150
O
P T
Power Dissipation
1.0
W
I OUT
DC Output Current
mA
20
BS62UV256
R0201-BS62UV256
Name
Function
A0-A14 Address Input
These 15 address inputs select one of the 32768 x 8-bit words in the RAM
CE Chip Enable Input
CE is active LOW. Chip enables must be active to read from or write to the device. If
chip enable is not active, the device is deselected and is in a standby power mode.
The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
DQ0-DQ7 Data Input/Output
Ports
These 8 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
MODE
WE
CE
OE
I/O OPERATION
Vcc CURRENT
Not selected
X
H
X
High Z
ICCSB, ICCSB1
Output Disabled
H
L
H
High Z
ICC
Read
H
L
DOUT
ICC
Write
L
X
DIN
ICC
TRUTH TABLE
PIN DESCRIPTIONS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
| BS6322 | 制造商:n/a 功能描述:Ships in 2 days |
| BS-632-2 | 制造商:PennEngineering (PEM) 功能描述: |
| BS640GBC3V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| BS640GBC4V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
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