参数资料
型号: BSP75NTA
厂商: Diodes Inc
文件页数: 3/8页
文件大小: 0K
描述: MOSFET N-CH 60V 1.2A SOT-223
产品培训模块: IntelliFET's
其它图纸: SOT-223
SOT-223 Footprint
标准包装: 1
系列: INTELLIFET™
类型: 低端
输入类型: 非反相
输出数: 1
导通状态电阻: 385 毫欧
电流 - 输出 / 通道: 1.3A
电流 - 峰值输出: 1.8A
电源电压: 2.2 V ~ 10 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 标准包装
产品目录页面: 1473 (CN2011-ZH PDF)
其它名称: BSP75NDKR
BSP75N
Absolute maximum ratings
Parameter
Continuous drain-source voltage
Drain-source voltage for short circuit protection V IN = 5V
Drain-source voltage for short circuit protection V IN = 10V
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation at T A =25°C (a)
Power dissipation at T A =25°C (c)
Continuous drain current @ V IN =10V; T A =25°C (a)
Continuous drain current @ V IN =5V; T A =25°C (a)
Continuous drain current @ V IN =5V; T A =25°C (c)
Continuous source current (body diode) (a)
Pulsed source current (body diode) (b)
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V DS
V DS(SC)
V DS(SC)
V IN
V IN
T j ,
T stg
P D
P D
I D
I D
I D
I S
I S
E AS
V LoadDump
V ESD
Limit
60
36
20
-0.2 ... +10
-0.2 ... +20
-40 to +150
-55 to +150
1.5
0.6
1.3
1.1
0.7
2.0
3.3
550
80
4000
E
40/150/56
Unit
V
V
V
V
V
°C
°C
W
W
A
A
A
A
A
mJ
V
V
Thermal resistance
Parameter
Junction to ambient (a)
Junction to ambient (b)
Junction to ambient (c)
Symbol
R JA
R JA
R JA
Limit
83
45
208
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper. Allocation of 6cm 2 copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated.
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
(c) For a device surface mounted on FR4 board with the minimum copper required for connections.
? Zetex Semiconductors plc 2006
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