参数资料
| 型号： | BSP75NTA |
| 厂商： | Diodes Inc |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 1.2A SOT-223 |
| 产品培训模块： | IntelliFET's |
| 其它图纸： | SOT-223 SOT-223 Footprint |
| 标准包装： | 1 |
| 系列： | INTELLIFET™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 385 毫欧 |
| 电流 - 输出 / 通道： | 1.3A |
| 电流 - 峰值输出： | 1.8A |
| 电源电压： | 2.2 V ~ 10 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | BSP75NDKR |
BSP75N
Electrical characteristics (at T AMB = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static characteristics
Drain-source clamp voltage
Off-state drain current
Off-state drain current
Input threshold voltage (*)
Input current
Input current
Input current
Static drain-source on-state
V DS(AZ)
I DSS
I DSS
V IN(th)
I IN
I IN
I IN
R DS(on)
60
1
70
0.1
3
2.1
0.7
1.5
4
520
75
3
15
1.2
2.7
7
675
V
A
A
V
mA
mA
mA
m
I D =10mA
V DS =12V, V IN =0V
V DS =32V, V IN =0V
V DS =V GS , I D =1mA
V IN =+5V
V IN =+7V
V IN =+10V
V IN =+5V, I D =0.7A
resistance
Static drain-source on-state
R DS(on)
385
550
m
V IN =+10V, I D =0.7A
resistance
Current limit (?)
Current limit (?)
I D(LIM)
I D(LIM)
0.7
1.0
1.0
1.8
1.5
2.3
A
A
V IN =+5V, V DS >5V
V IN =+10V, V DS >5V
Dynamic characteristics
Turn-on time (V IN to 90% I D )
t on
3.0
10
s
R L =22 , V DD =12V,
V IN =0 to +10V
Turn-off time (V IN to 90% I D )
t off
13
20
s
R L =22 , V DD =12V,
V IN =+10V to 0V
Slew rate on (70 to 50% V DD )
-dV DS /dt on
8
20
V/ s
R L =22 , V DD =12V,
V IN =0 to +10V
Slew rate off (50 to 70% V DD )
DV DS /dt off
3.2
10
V/ s
R L =22 , V DD =12V,
V IN =+10V to 0V
Protection functions (?)
Required input voltage for
V PROT
4.5
V
over temperature protection
Thermal overload trip
T JT
150
175
°C
temperature
Thermal hysteresis
1
°C
Unclamped single pulse
E AS
550
mJ
I D(ISO) =0.7A,
inductive energy T j =25°C
V DD =32V
Unclamped single pulse
inductive energy T j =150°C
200
mJ
I D(ISO) =0.7A,
V DD =32V
Inverse diode
Source drain voltage
V SD
1
V
V IN =0V, -I D =1.4A
NOTES:
(*) The drain current is limited to a reduced value when V DS exceeds a safe level.
(?) Protection features may operate outside spec for V IN <4.5V.
(?) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
? Zetex Semiconductors plc 2006
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