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| 型号： | BSS123_D87Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 170MA SOT-23 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 170mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 欧姆 @ 170mA，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 2.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 73pF @ 25V |
| 功率 - 最大： | 360mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 带卷 (TR) |
June 2003
BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
D
S
Features
? 0.17 A, 100 V. R DS(ON) = 6 ? @ V GS = 10 V
R DS(ON) = 10 ? @ V GS = 4.5 V
? High density cell design for extremely low R DS(ON)
? Rugged and Reliable
? Compact industry standard SOT-23 surface mount
package
D
G
S
SOT-23
G
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
100
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
0.17
A
– Pulsed
0.68
P D
Maximum Power Dissipation
Derate Above 25 ° C
(Note 1)
0.36
2.8
W
mW/ ° C
T J , T STG
T L
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
? 55 to +150
300
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
350
° C/W
Package Marking and Ordering Information
Device Marking
SA
Device
BSS123
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2003 Fairchild Semiconductor Corporation
BSS123 Rev G(W)
相关PDF资料 |
PDF描述 |
|---|---|
| BSS123TC | MOSFET N-CHAN 100V SOT23-3 |
| BSS123W-7 | MOSFET N-CH 100V 170MA SC70-3 |
| BSS127S-7 | MOSFET N CH 600V 50MA SOT23 |
| BSS138_L99Z | MOSFET N-CH 50V 220MA SOT-23 |
| BSS138DW-7 | MOSFET DUAL N-CHAN 50V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS123E6327 | 功能描述:MOSFET N-CH 100V 170MA SOT-23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SIPMOS® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| BSS123E6327T | 制造商:Infineon Technologies AG 功能描述:N-CH MOSFET SOT23 T&R 3K 100V |
| BSS123E6433XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R |
| BSS123H6327XT | 制造商:Infineon Technologies AG 功能描述:CHIPLIEFERUNGEN |
| BSS123L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 170MA I(D) | SOT-23 |
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