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参数资料
| 型号： | BSS123TC |
| 厂商： | Diodes Inc |
| 文件页数： | 1/1页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 100V SOT23-3 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 170mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 欧姆 @ 100mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.8V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 20pF @ 25V |
| 功率 - 最大： | 360mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
BSS123
ISSUE 3 – JANUARY 1996
PARTMARKING DETAIL
7
– SA
ABSOLUTE MAXIMUM RATINGS.
D
SOT23
G
S
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current at T amb =25°C
Pulsed Drain Current
Gate-Source Voltage
Peak Gate-Source Voltage
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
SYMBOL
V DS
V DGR
I D
I DM
V GS
V GSM
P tot
T j :T stg
VALUE
100
100
170
680
± 20
± 20
360
-55 to +150
UNIT
V
V
mA
mA
V
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MIN.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV DSS
100
V I D =0.25mA, V GS =0V
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
V GS(th)
I GSS
I DSS
R DS(on)
g fs
0.8
80
2.2
10
1
2
5
120
2.8
50
15
60
10
6
V
nA
μ A
μ A
nA
?
mS
I D =1mA, V DS = V GS
V GS = ± 20V, V DS =0V
V DS =100V, V GS =0V
V DS =100V, V GS =0V, T=125°C (2)
V DS =20V, V GS =0V
V GS =10V, I D =100mA
V DS =25V, I D =100mA
Input Capacitance (2)
C iss
20
pF
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C oss
C rss
t d(on)
t r
t d(off)
t f
10
10
15
25
9
4
pF
pF
ns
ns
ns
ns
V DS =25V, V GS =0V, f=1MHz
V DD ≈ 30V, I D =280mA
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
For typical characteristics graphs see ZVN3310F datasheet.
3 - 70
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS123W | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS123W_0711 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS123W_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS123W-7 | 功能描述:MOSFET 100V 200mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BSS123W-7-F | 功能描述:MOSFET 100V 200mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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