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参数资料
| 型号： | BSS138K |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 220MA SOT-23-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 欧姆 @ 50mA，5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 58pF @ 25V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 其它名称： | BSS138KDKR |
May 2013
BSS138K
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Features
?
Low On-Resistance
?
?
?
?
?
?
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Pb Free / RoHS Compliant
D
G
SOT - 23
Marking : SK
S
?
?
Green Compound
ESD HBM = 2000 V as per JEDEC A114A; ESD CDM = 2000 V as per JEDEC C101C
Absolute Maximum Ratings (1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted.
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Value
50
±12
Units
V
V
I D
T J
T STG
Drain Current
Operating Junction Temperature Range
Storage Temperature Range
Continuous
Pulsed
0.22
0.88
-55 to +150
-55 to +150
A
° C
° C
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
Thermal Characteristics
Symbol
P D
R θ JA
Parameter
Total Device Dissipation
Derating above T A = 25°C
Thermal Resistance, Junction to Ambient (2)
Value
350
2.8
350
Units
mW
mW/ ° C
° C/W
Note:
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Package Marking and Ordering Information
Device Marking
SK
Device
BSS138K
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
? 2010 Fairchild Semiconductor Corporation
BSS138K Rev. 1.3.0
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| BSS138LT1 | MOSFET N-CH 50V 200MA SOT-23 |
| BSS138TC | MOSFET N-CHAN 50V SOT23-3 |
| BSS138W-7 | MOSFET N-CH 50V 200MA SC70-3 |
| BSS138W | MOSFET N-CH 50V 21MA SOT323 |
| BSS84-7 | MOSFET P-CH 50V 130MA SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS138L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 200 mA, 50 V |
| BSS138L-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE |
| BSS138L-AL3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE |
| BSS138LT1 | 功能描述:MOSFET 50V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BSS138LT1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 200 mAmps， 50 Volts |
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