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参数资料
| 型号： | BSS138K |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 220MA SOT-23-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 欧姆 @ 50mA，5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 58pF @ 25V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 其它名称： | BSS138KDKR |
Physical Dimensions
SOT-23
1.30+0.20
2.92±0.20
3
-0.15
1.40
0.95
2.20
1
2
(0.29)
0.95
0.60
0.37
1.90
0.20
A B
1.90
LAND PATTERN
RECOMMENDATION
1.00
1.20 MAX
(0.93)
SEE DETAIL A
0.10
0.00
C
0.10
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
0.23
0.08
0.20 MIN
(0.55)
0.25
SEATING
PLANE
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
SCALE: 2X
Figure 8. 3LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/ .
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packaging/tr/SOT23-3L_tr.pdf .
? 2010 Fairchild Semiconductor Corporation
BSS138K Rev. 1.3.0
5
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| BSS138LT1 | MOSFET N-CH 50V 200MA SOT-23 |
| BSS138TC | MOSFET N-CHAN 50V SOT23-3 |
| BSS138W-7 | MOSFET N-CH 50V 200MA SC70-3 |
| BSS138W | MOSFET N-CH 50V 21MA SOT323 |
| BSS84-7 | MOSFET P-CH 50V 130MA SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS138L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 200 mA, 50 V |
| BSS138L-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE |
| BSS138L-AL3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE |
| BSS138LT1 | 功能描述:MOSFET 50V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BSS138LT1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 200 mAmps， 50 Volts |
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