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参数资料
| 型号： | BSS138W-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 200MA SC70-3 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 欧姆 @ 220mA，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 10V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SOT-323 |
| 包装： | 剪切带 (CT) |
| 其它名称： | BSS138WDICT |
BSS138W
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Drain
SOT-323
Gate
D
Source
G
S
Top View
Ordering Information (Note 4)
Part Number
BSS138W -7-F
Equivalent Circuit
Case
SOT-323
Top View
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
K38 = Product Type Marking Code
K38
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y ? M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y ? = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Chengdu A/T Site
Shanghai A/T Site
Year
Code
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
2018
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
BSS138W
Document number: DS30206 Rev. 11 - 2
1 of 5
www.diodes.com
September 2013
? Diodes Incorporated
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PDF描述 |
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| BSS8402DW-7 | MOSFET N+P 50,60V 130MA SC70-6 |
| BSS84DW-7 | MOSFET DUAL P-CHAN -50V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS138W7F | 制造商:Diodes Incorporated 功能描述: |
| BSS138W-7-F | 功能描述:MOSFET 50V 200mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BSS138WE6327XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-323 T/R |
| BSS138WE6433XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-323 T/R |
| BSS138WH6327 | 制造商:Infineon Technologies AG 功能描述: |
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