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| 型号： | BSS138W-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 200MA SC70-3 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 欧姆 @ 220mA，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 10V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SOT-323 |
| 包装： | 剪切带 (CT) |
| 其它名称： | BSS138WDICT |
BSS138W
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 5)
Symbol
V DSS
V DGR
Value
50
50
Units
V
V
Gate-Source Voltage
Drain Current (Note 6)
Continuous
Continuous
V GSS
I D
? 20
200
V
mA
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R ? JA
T J , T STG
Value
200
625
-55 to +150
Units
mW
? C/W
? C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
50
?
?
75
?
?
?
0.5
? 100
V
μA
nA
V GS = 0V, I D = 250 ? A
V DS = 50V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V GS(th)
R DS (ON)
g FS
0.5
?
100
1.2
1.4
?
1.5
3.5
?
V
?
mS
V DS = V GS , I D = 250 ? A
V GS = 10V, I D = 0.22A
V DS = 25V, I D = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C iss
?
?
50
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
?
?
25
8.0
pF
pF
V DS = 10V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS(Note 8)
Turn-On Delay Time
Turn-Off Delay Time
t D(ON)
t D(OFF)
?
?
?
?
20
20
ns
ns
V DD = 30V, I D = 0.2A,
R GEN = 50 ?
Notes:
5. R GS ? 20K ? .
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
BSS138W
Document number: DS30206 Rev. 11 - 2
2 of 5
www.diodes.com
September 2013
? Diodes Incorporated
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